MS110/TR12 Allicdata Electronics
Allicdata Part #:

MS110/TR12-ND

Manufacturer Part#:

MS110/TR12

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Microsemi Corporation
Short Description: DIODE SCHOTTKY 100V 1A DO204AL
More Detail: Diode Schottky 100V 1A Through Hole DO-204AL (DO-4...
DataSheet: MS110/TR12 datasheetMS110/TR12 Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Diode Type: Schottky
Voltage - DC Reverse (Vr) (Max): 100V
Current - Average Rectified (Io): 1A
Voltage - Forward (Vf) (Max) @ If: 830mV @ 1A
Speed: Fast Recovery = 200mA (Io)
Current - Reverse Leakage @ Vr: 100µA @ 100V
Capacitance @ Vr, F: --
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 175°C
Base Part Number: MS110
Description

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The MS110/TR12 device is a single rectifier diode that is used in a variety of applications. It has a maximum average forward current of 1.2 A and a maximum repetitive peak reverse voltage of 100 V. The reverse recovery time of this diode is typically less than 50 ns. This diode is also available in various packages, such as D-pack, DO-4, SMD-4, and others.

The MS110/TR12 is mainly used for general-purpose rectification and power management. It can be used in power supplies, battery chargers, lamp control systems, LED drivers, and many other applications. It is also used as a rectifier in data communications equipment, such as modems and multiplexers.

The working principle of the MS110/TR12 rectifier diode is based on the P-N junction. When a positive voltage is applied to the anode, it attracts the electrons in the P-type semiconductor material and repels the holes in the N-type material. This causes the P-N junction to become forward biased and hence allows current to flow through the diode. In the reverse bias condition, no current can flow through the diode.

The current flow through the diode is determined by the width of the depletion region. When a voltage greater than the breakdown voltage is applied across the diode, the depletion region increases and the internal resistance of the diode decreases, allowing more current to flow through the diode. The breakdown voltage of this diode is typically around 4 V.

In order to prevent thermal runaway, the MS110/TR12 is designed with an integrated heat sink. This helps to ensure that the device does not overheat during operation. It also features overvoltage protection and reverse polarity protection to ensure safe operation.

The MS110/TR12 is a reliable rectifier diode that can be used in a variety of applications. It is simple to use, efficient, and cost-effective. This diode is available in a wide range of packages, making it suitable for a variety of applications. It is an ideal choice for general-purpose rectification and power management.

The specific data is subject to PDF, and the above content is for reference

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