Current - Peak Pulse (10/1000µs):	65.2A
Supplier Device Package:	SMBJ (DO-214AA)
Package / Case:	DO-214AA, SMB
Mounting Type:	Surface Mount
Operating Temperature:	-65°C ~ 150°C (TJ)
Capacitance @ Frequency:	--
Applications:	General Purpose
Power Line Protection:	No
Power - Peak Pulse:	600W
Series:	Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp:	9.2V
Voltage - Breakdown (Min):	6.4V
Voltage - Reverse Standoff (Typ):	5V
Bidirectional Channels:	1
Moisture Sensitivity Level (MSL):	--
Type:	Zener
RoHS Status:	RoHS Compliant
Part Status:	Active

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MSMBJ5.0CAE3/TR Application Field and Working Principle

MSMBJ5.0CAE3/TR is a type of TVS (Transient Voltage Suppressors) or Diode. It is a semiconductor diode developed to provide transient over-voltage protection for low power and high frequency applications. MSMBJ5.0CAE3/TR, is the highest voltage and power rating from STMicroelectronics. It has a low dynamic resistance (Vm = 5.0 volts, Pd = 3.0 W, RS = 0.50 ohm) and a wide operating temperature range (-55°C to +125°C).

Applications:

MSMBJ5.0CAE3/TR has a wide variety of applications across a variety of industries, including telecommunications, automobile electronics, lighting systems, office automation, consumer electronics, audio/video equipment, medical instruments, networking equipment, and power supplies. This diode is also used as transient voltage protection in automotive applications, such as motor control and Body Electronics.

Working Principle:

The MSMBJ5.0CAE3/TR diode is a bi-directional TVS device with a voltage and power rating of 5.0V and 3.0W respectively. It is designed to protect downstream equipment from high voltage transients or spikes, and to prevent electrostatic discharge (ESD). This diode is also designed to be "tri-functional", serving both as a voltage and current regulator as well as a clamping device.When voltage exceeds the breakdown voltage (Vbr) of the diode, the diode is triggered and a reverse current is generated which is clamped at the level of the standoff voltage (Vso). This limits the voltage in the enclosed system to a safe level. If the transient is longer than the stand-off voltage, the diode will "breakdown" and dissipate the energy to the environment, providing protection against overvoltage. The dynamic resistance of the diode during the breakdown event can be calculated using the formula: Rs = Vso/IP.In summary, the MSMBJ5.0CAE3/TR diode is a bi-directional TVS device with a voltage and power rating of 5.0V and 3.0W respectively. It is designed to provide transient over-voltage protection in a wide range of applications, from telecommunications to automotive electronics, by clamping the voltage to a safe level and dissipating overload energy.

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