| Allicdata Part #: | 1086-8072-ND |
| Manufacturer Part#: |
MSMBJ26AE3 |
| Price: | $ 0.71 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 26V 42.1V DO214AA |
| More Detail: | N/A |
| DataSheet: | MSMBJ26AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 848 +: | $ 0.64602 |
| Voltage - Clamping (Max) @ Ipp: | 42.1V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 14.2A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 28.9V |
| Voltage - Reverse Standoff (Typ): | 26V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
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The MSMBJ26AE3 is a type of TVS - Diodes. It is used as an overvoltage protection device that helps to protect various electronic circuitries and components from getting damaged due to excessive electric voltages.
When the external voltage exceeds the device breakdown voltage, the component bridges the current and hence directs it away from the critical circuit elements. This ultimately protects the circuit and its components from getting damaged due to current surge. It is also widely used in communication systems and switching power supply systems for providing overvoltage protection.
The MSMBJ26AE3 is an axial leaded diode featuring a low clamping voltage of 26 volts in two separate breakdown modes. It has a 180mA peak pulsed load current and 1500W peak power. The device is designed to be used as a bidirectional overvoltage protector as well. It has a fast response time of 25 nanoseconds ensuring better reliability and accuracy.
The device features a glass passivated junction that helps to protect it from damage and shock while handling. It has an average time to failure (MTTF) of more than 300K hours at high temperature as well. In addition, it also features a low capacitance of 4 picofarads thereby ensuring better data signal transmission.
The working principle of the MSMBJ26AE3 involves the formation of an inverse avalanche breakdown through the depletion layer when the breakdown voltage is reached. The current then passes through the device and is taken away from the circuit. The device is designed to act as a low power hybrid between the Zener Diode and the avalanche diode for better reliability and accuracy.
The MSMBJ26AE3 is widely used in various applications such as telecommunications, consumer electronics, automotive electronics, LED lighting, personal electronics, and industrial appliances. It is also used in battery chargers, line protection systems, and USB ports. It is designed to meet the requirements of Lead-Free processing for RoHS compliance.
Overall, the MSMBJ26AE3 is a highly reliable and accurate device that helps to protect circuit elements from getting damaged due to overvoltage conditions. It has a fast response time, low capacitance, and long MTTF. It is used in a wide range of applications such as automotive electronics, consumer electronics, and so on.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MSMBJ2K5.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
| MSMBJ170A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ22A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBG10CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 10V 17V DO215AA |
| MSMBJ2K4.0E3 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4V 6.3V DO214AA |
| MSMBJ30A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJ150A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 150V 243V DO214... |
| MSMBJ10A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJ24A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBG24A/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBG11CA/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
| MSMBJ2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO214AA |
| MSMBG30AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 30V 48.4V DO215... |
| MSMBG14CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 14V 23.2V DO215... |
| MSMBG54CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 54V 87.1V DO215... |
| MSMBG16CAE3/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
| MSMBJ36AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
| MSMBG8.5A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 8.5V 14.4V DO21... |
| MSMBJ22CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
| MSMBG28CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBG40A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
| MSMBJ18A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBG18CA/TR | Microsemi Co... | 1.01 $ | 1000 | TVS |
| MSMBJSAC18 | Microsemi Co... | 2.2 $ | 1000 | TVS DIODE 18V 28.8V DO214... |
| MSMBJ58AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 58V 93.6V DO214... |
| MSMBG110AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 110V 177V DO215... |
| MSMBG28AE3 | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 28V 45.4V DO215... |
| MSMBJ16A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBJ16AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 16V 26V DO214AA |
| MSMBJ170CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 170V 275V DO214... |
| MSMBJ36CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBG2K5.0 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 5V 7.6V DO215AA |
| MSMBG2K4.5 | Microsemi Co... | 0.0 $ | 1000 | TVS DIODE 4.5V 6.6V DO215... |
| MSMBJ12A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
| MSMBJ11CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
| MSMBJ60CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 60V 96.8V DO214... |
| MSMBG90CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 90V 146V DO215A... |
| MSMBG5.0AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ8.0AE3 | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 8V 13.6V DO214A... |
| MSMBJ45CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
TVS DIODE 31V 56.4V DO214AB
TVS DIODE 8.5V 13.5V DO219AB
TVS DIODE 350V 690V CASE 5A
TVS DIODE 170V 334V CASE 5A
TVS DIODE 7.02V 12.1V T-18
TVS DIODE 78V 126V DO204AL
MSMBJ26AE3 Datasheet/PDF