| Allicdata Part #: | 1086-8000-ND |
| Manufacturer Part#: |
MSMBJ10AE3 |
| Price: | $ 0.71 |
| Product Category: | Circuit Protection |
| Manufacturer: | Microsemi Corporation |
| Short Description: | TVS DIODE 10V 17V DO214AA |
| More Detail: | N/A |
| DataSheet: | MSMBJ10AE3 Datasheet/PDF |
| Quantity: | 1000 |
| Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
| Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
| 848 +: | $ 0.64602 |
Specifications
| Voltage - Clamping (Max) @ Ipp: | 17V |
| Supplier Device Package: | SMBJ (DO-214AA) |
| Package / Case: | DO-214AA, SMB |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -65°C ~ 150°C (TJ) |
| Capacitance @ Frequency: | -- |
| Applications: | General Purpose |
| Power Line Protection: | No |
| Power - Peak Pulse: | 600W |
| Current - Peak Pulse (10/1000µs): | 35.3A |
| Series: | Military, MIL-PRF-19500 |
| Voltage - Breakdown (Min): | 11.1V |
| Voltage - Reverse Standoff (Typ): | 10V |
| Unidirectional Channels: | 1 |
| Type: | Zener |
| Moisture Sensitivity Level (MSL): | -- |
| Part Status: | Active |
| Lead Free Status / RoHS Status: | -- |
| Packaging: | Bulk |
Description
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MSMBJ10AE3 Application Field and Working PrincipleTVS (Transient Voltage Suppressor) diodes are devices used for preventing voltage transient events and overloading voltage transients. They are commonly used for circuit protection and protection against transient voltage pulses, as well as for suppressing high voltage surges.MSMBJ10AE3 is a type of TVS diode made by Momentive, which means it is designed to protect electronic circuits from damage caused by voltage transient events, such as lightning strikes, electrostatic discharge (ESD), and transient voltage spikes. The device has a PULSE rating of 1500 watts for 8.3 milliseconds at a peak reverse voltage of 1000 volts.MSMBJ10AE3 is typically used in power supplies, DC/DC converters, industrial automation, communication systems, and signal protection circuits. It is designed to operate in a wide temperature range of -55°C to 125°C and a maximum operating voltage of 250V. When an electrical current is applied to the anode of an MSMBJ10AE3 device, it produces a junction potential between the anode and the cathode (or P-type and N-type layers). This potential difference creates a charge imbalance between the junction layers, so electrons from the anode flow to the cathode and holes flow from the cathode to the anode. The junction potential and the electric field created by the current cause the free carriers to move faster in the P-N junction. When the electric field reaches a maximum point, it produces a large current flow, forming a barrier and providing protection against transient voltage pulses. When this barrier is formed, the reverse leakage current can be regulated, reducing the amount of electrical energy released during surges and voltage fluctuations. That is, the MSMBJ10AE3 diode releases its energy in the form of waves in order to protect the connected circuit. Overall, the MSMBJ10AE3 TVS diode is a reliable and cost-effective protection device for circuits. It is designed to reduce surge energy and protect electronic devices from transient voltage events. It is ideal for use in power supplies, industrial automation, communication systems, and various other signal protection applications.The specific data is subject to PDF, and the above content is for reference
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| MSMBJ15CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
| MSMBJ26A/TR | Microsemi Co... | 0.79 $ | 1000 | TVS |
| MSMBG15CAE3 | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 15V 24.4V DO215... |
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| MSMBG75A | Microsemi Co... | 0.77 $ | 1000 | TVS DIODE 75V 121V DO215A... |
| MSMBG20AE3/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ18A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
| MSMBJ150CAE3 | Microsemi Co... | 0.76 $ | 1000 | TVS DIODE 150V 243V DO214... |
| MSMBG78CA | Microsemi Co... | 0.92 $ | 1000 | TVS DIODE 78V 126V DO215A... |
| MSMBJ15CAE3/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ170CA/TR | Microsemi Co... | 0.92 $ | 1000 | TVS |
| MSMBJ26A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
| MSMBJ70A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 70V 113V DO214A... |
| MSMBJ90A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 90V 146V DO214A... |
| MSMBG36A/TR | Microsemi Co... | 0.95 $ | 1000 | TVS |
| MSMBJ33A | Microsemi Co... | 0.71 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
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MSMBJ10AE3 Datasheet/PDF