Allicdata Part #: | 1086-8484-ND |
Manufacturer Part#: |
MSMCGLCE80AE3 |
Price: | $ 3.74 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS DIODE 80V 129V DO215AB |
More Detail: | N/A |
DataSheet: | MSMCGLCE80AE3 Datasheet/PDF |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Lead Free Status / RoHS Status: | Contains lead / RoHS non-compliant |
210 +: | $ 3.39534 |
Voltage - Clamping (Max) @ Ipp: | 129V |
Supplier Device Package: | SMCG (DO-215AB) |
Package / Case: | DO-215AB, SMC Gull Wing |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | 90pF @ 1MHz |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Current - Peak Pulse (10/1000µs): | 11.6A |
Series: | Military, MIL-PRF-19500 |
Voltage - Breakdown (Min): | 88.7V |
Voltage - Reverse Standoff (Typ): | 80V |
Unidirectional Channels: | 1 |
Type: | Zener |
Moisture Sensitivity Level (MSL): | -- |
Part Status: | Active |
Lead Free Status / RoHS Status: | -- |
Packaging: | Bulk |
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TVS diode is a bidirectional, low capacitance, transient voltage suppression diode. The MSMCGLCE80AE3 is a low capacitance TVS diode that can be used for various applications including overvoltage protection, ESD protection, data line protection, and more. The device provides electrostatic discharge protection up to 10 kV (contact) and has a specified reverse breakdown voltage (VBR) from 5 to 140 V. This datasheet will discuss the application field and the working principle of the MSMCGLCE80AE3.
The MSMCGLCE80AE3 is primarily used in overvoltage and ESD protection applications. It is designed to protect sensitive electronics and components from voltage spikes that can occur from electrical surges, caused by lightning, power supply fluctuations, or electrostatic discharge (ESD). Its low capacitance makes it suitable for use in high-frequency applications. It can also protect USB ports, HDMI ports, Ethernet ports, and other high-speed data lines, which require minimal signal disruption. The device is RoHS compliant.
The MSMCGLCE80AE3 is a switching TVS diode, which means that it uses avalanche breakdown to switch from its off-state to its on-state when a transient electrical impulse appears. In the off-state, the diode acts like an open switch, and no current can flow through the diode. When a transient occurs, and the voltage reaches the protection threshold, the diode switches from its off-state to its on-state. This allows the current to flow through the diode. When the transient disappears, the diode will switch back to the off-state, allowing the electronics to return to normal.
The MSMCGLCE80AE3 provides an industry-leading low capacitance of 0.1 pF for its range of operating voltages, making it suitable for high-speed data lines and other high-frequency applications. The device also features a low clamping voltage and low dynamic resistance, which helps limit the amount of energy dissipated during a transient event. The device is also designed with a low dynamic leakage current, which helps ensure that it does not interfere with normal operating conditions.
The MSMCGLCE80AE3 is offered in an 8-pin microSOP E package, with a 3x3 mm body size. It can be used in temperatures ranging from -55 to 150 °C. The device is suitable for a wide range of power applications, making it suitable for various industrial, automotive, and consumer applications.
In summary, the MSMCGLCE80AE3 is a low capacitance, high performance TVS diode designed for overvoltage protection and ESD protection. It is also suitable for use in high-speed data lines and other high-frequency applications due to its low capacitance. The device is offered in an 8-pin microSOP E package and can be used in temperatures ranging from -55 to 150 °C. It is RoHS compliant and can be used in a multitude of power applications, making it suitable for various industrial, automotive, and consumer applications.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MSMCJ100A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
MSMCJ100AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 100V 162V DO214... |
MSMCJ10A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MSMCJ10AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 10V 17V DO214AB |
MSMCJ110A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 110V 177V DO214... |
MSMCJ110AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 110V 177V DO214... |
MSMCJ11A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MSMCJ11AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 11V 18.2V DO214... |
MSMCJ120A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 120V 193V DO214... |
MSMCJ120AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 120V 193V DO214... |
MSMCJ12A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MSMCJ12AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 12V 19.9V DO214... |
MSMCJ130A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 130V 209V DO214... |
MSMCJ130AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 130V 209V DO214... |
MSMCJ13A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MSMCJ13AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MSMCJ14A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MSMCJ14AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 14V 23.2V DO214... |
MSMCJ150A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 150V 243V DO214... |
MSMCJ150AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 150V 243V DO214... |
MSMCJ15AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 15V 24.4V DO214... |
MSMCJ160A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 160V 259V DO214... |
MSMCJ160AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 160V 259V DO214... |
MSMCJ16A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 16V 26V DO214AB |
MSMCJ16AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 16V 26V DO214AB |
MSMCJ170A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 170V 275V DO214... |
MSMCJ170AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 170V 275V DO214... |
MSMCJ17A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MSMCJ17AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 17V 27.6V DO214... |
MSMCJ18A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MSMCJ18AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MSMCJ20A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMCJ20AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 20V 32.4V DO214... |
MSMCJ22A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
MSMCJ22AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
MSMCJ24A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
MSMCJ26AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 26V 42.1V DO214... |
MSMCJ30AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
MSMCJ33AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 33V 53.3V DO214... |
MSMCJ36A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 36V 58.1V DO214... |
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