
Allicdata Part #: | MSMCJ6.0AE3/TRMS-ND |
Manufacturer Part#: |
MSMCJ6.0AE3/TR |
Price: | $ 1.20 |
Product Category: | Circuit Protection |
Manufacturer: | Microsemi Corporation |
Short Description: | TVS |
More Detail: | N/A |
DataSheet: | ![]() |
Quantity: | 1000 |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
600 +: | $ 1.08817 |
Current - Peak Pulse (10/1000µs): | 145.6A |
Supplier Device Package: | SMCJ (DO-214AB) |
Package / Case: | DO-214AB, SMC |
Mounting Type: | Surface Mount |
Operating Temperature: | -65°C ~ 150°C (TJ) |
Capacitance @ Frequency: | -- |
Applications: | General Purpose |
Power Line Protection: | No |
Power - Peak Pulse: | 1500W (1.5kW) |
Series: | Military, MIL-PRF-19500 |
Voltage - Clamping (Max) @ Ipp: | 10.3V |
Voltage - Breakdown (Min): | 6.67V |
Voltage - Reverse Standoff (Typ): | 6V |
Bidirectional Channels: | 1 |
Moisture Sensitivity Level (MSL): | -- |
Type: | Zener |
RoHS Status: | RoHS Compliant |
Part Status: | Active |
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TVS(Transient Voltage Suppressor)diodes or Transient Voltage Suppression diodes are semiconductor devices designed to protect electrical circuits from voltage surge or overloads. It is also called as a Transient Voltage Surge Suppressor(TVSS). The device has a diode-like structure and it helps in limiting the current and the voltage that passes through it. The most common type of Transient Voltage Suppressor is the MSMCJ6.0AE3/TR.
The MSMCJ6.0AE3/TR is a unidirectional, 600 Watts transient voltage suppressor designed to reduce transient overvoltage on the positive side of an electrical system or circuit. It is constructed with a junction transistor and is the newest design in TVS diode technology. The device is a three-terminal transistorized diode and operates from 0.2 to 1.5 Volts.
The MSMCJ6.0AE3/TR provides electrical protection from a wide range of low to high current surge conditions and can handle up to 600 Watts and it is capable of managing instant overvoltage conditions of up to 6.0KV. The device has a temperature-stable, low-voltage reverse breakdown characteristic that enables it to remain in the forward-bias region even under steady-state high voltage stress. It also has a low-power loss at high temperatures, which makes it very suitable for use in high-temperature environments.
The device is specially designed to have a very fast response time to voltage surges. It has a fast response time from the transient to the steady-state voltage. The MSMCJ6.0AE3/TR can also handle large peak currents and surges without burning out or creating an open circuit. It also has a low capacitance level, which reduces signal interference and crosstalk. The device operates at a relatively low operating temperature and has a low failure rate.
The MSMCJ6.0AE3/TR is mainly used in automotive, medical, consumer electronics, power and Telecommunications applications. It has a wide range of applications, such as electrostatic discharge protection, voltage surge protection, circuit protection and overvoltage protection. It can also be used to protect sensitive electronic circuits from voltage spikes. The device is UL listed and meets the requirements of many government and industry standards.
The MSMCJ6.0AE3/TR operates on the principle of zener diode avalanche breakdown. It works by providing an avalanche breakdown at a voltage differential level, which is higher than the zener voltage and allows current to flow through a very low-resistance path when the applied voltage is higher than the breakdown voltage. This prevents the overvoltage current from damaging the electric circuit. The internal structure of the device provides an excellent surge capability and protections.
In conclusion, the MSMCJ6.0AE3/TR is a three-terminal transistorized TVS diode that provides excellent protection from voltage transients and surges in many types of applications. It has a fast response time, low capacitance level, and a temperature-stable breakdown characteristic. The device is widely used in automotive, medical, consumer electronics, power and Telecommunications applications and is UL listed and meets many government and industry standards.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
---|
MSMCJ16AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 16V 26V DO214AB |
MSMCJ45AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
MSMCG120AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 120V 193V DO215... |
MSMCG22A | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMCJ22CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 22V 35.5V DO214... |
MSMCG15A | Microsemi Co... | 2.13 $ | 227 | TVS DIODE 15V 24.4V DO215... |
MSMCG33A | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 33V 53.3V DO215... |
MSMCG58CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
MSMCJLCE13A/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
MSMCJ28AE3/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
MSMCJ6.0AE3/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
MSMCG130AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 130V 209V DO215... |
MSMCJ24CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 24V 38.9V DO214... |
MSMCJ45CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 45V 72.7V DO214... |
MSMCG8.0CAE3 | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 8V 13.6V DO215A... |
MSMCJLCE150AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 150V 243V DO214... |
MSMCJ13CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MSMCJ54CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 54V 87.1V DO214... |
MSMCG26CAE3 | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 26V 42.1V DO215... |
MSMCJ130AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 130V 209V DO214... |
MSMCJ64A | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 64V 103V DO214A... |
MSMCG170AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 170V 275V DO215... |
MSMCG70AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 70V 113V DO215A... |
MSMCG78CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 78V 126V DO215A... |
MSMCJLCE13A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MSMCJ5.0CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 5V 9.2V DO214AB |
MSMCJ54CAE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 54V 87.1V DO214... |
MSMCJLCE120AE3 | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 120V 193V DO214... |
MSMCJ13AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 13V 21.5V DO214... |
MSMCJ18AE3 | Microsemi Co... | 1.12 $ | 1000 | TVS DIODE 18V 29.2V DO214... |
MSMCG22AE3 | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 22V 35.5V DO215... |
MSMCJ28CA | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 28V 45.4V DO214... |
MSMCJ15CA/TR | Microsemi Co... | 1.2 $ | 1000 | TVS |
MSMCJLCE30A | Microsemi Co... | 3.6 $ | 1000 | TVS DIODE 30V 48.4V DO214... |
MSMCG58A | Microsemi Co... | 1.2 $ | 1000 | TVS DIODE 58V 93.6V DO215... |
MSMCG10CA | Microsemi Co... | 1.27 $ | 1000 | TVS DIODE 10V 17V DO215AB |
MSMCJLCE14A/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
MSMCJLCE15A/TR | Microsemi Co... | 3.23 $ | 1000 | TVS |
MSMCGLCE40A | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 40V 64.5V DO215... |
MSMCGLCE80AE3 | Microsemi Co... | 3.74 $ | 1000 | TVS DIODE 80V 129V DO215A... |
TVS DIODE 31V 56.4V DO214AB

TVS DIODE 8.5V 13.5V DO219AB

TVS DIODE 350V 690V CASE 5A

TVS DIODE 170V 334V CASE 5A

TVS DIODE 7.02V 12.1V T-18

TVS DIODE 78V 126V DO204AL
