MSMCJ130AE3 Allicdata Electronics
Allicdata Part #:

1086-8514-ND

Manufacturer Part#:

MSMCJ130AE3

Price: $ 1.12
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS DIODE 130V 209V DO214AB
More Detail: N/A
DataSheet: MSMCJ130AE3 datasheetMSMCJ130AE3 Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
596 +: $ 1.01871
Stock 1000Can Ship Immediately
$ 1.12
Specifications
Voltage - Clamping (Max) @ Ipp: 209V
Supplier Device Package: DO-214AB (SMCJ)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Current - Peak Pulse (10/1000µs): 7.2A
Series: Military, MIL-PRF-19500
Voltage - Breakdown (Min): 144V
Voltage - Reverse Standoff (Typ): 130V
Unidirectional Channels: 1
Type: Zener
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Bulk 
Description

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TVS diodes are a type of surge protection device commonly used in many modern applications to protect from electrical overvoltage damage, particularly in applications involving high power. The MSMCJ130AE3 TVS diode is a bi-directional device specifically designed for applications in high power, high-speed electrical and electronic circuits. It offers good capacitance characteristics and minimizes the number of components needed for circuit protection, as well as offering excellent protection from destructive levels of voltage. Its bi-directional feature also helps in dissipating currents from damaged components, and offering excellent protection from short circuits.

The MSMCJ130AE3 TVS diode\'s working principle can be explained by viewing it as a two-terminal device with a junction between its anode and cathode, with the anode being the positive terminal and the cathode being the negative terminal. When exposed to a voltage higher than the breakdown voltage of the diode, current will flow through the junction. The diode\'s capacitive characteristics allow for the efficient storage of charging currents, which can be released to the circuit when the breakdown voltage is reached. This allows the diode to quickly discharge the current and prevent the voltage from reaching damaging levels. The diode also has a low reverse leakage current, allowing it to store energy within the junction for extended periods of time.

The MSMCJ130AE3 diode is designed primarily for applications in automotive, industrial, telecom, data processing, and consumer electronics, as well as other applications involving ac/dc power supplies. It can also be used to in places where there are high levels of EMI and RFI as it can help to suppress electrical noise from entering the circuit and causing multiple issues. In terms of its physical characteristics, the diode is leadless, surface mountable, and utilizes a TO-226AA package. The diode also features an operation temperature ranging from -55°C to +175°C and offers a wide range of options for both the reverse breakdown voltage and peak pulse power.

Overall, the MSMCJ130AE3 TVS diode offers excellent protection for today’s modern electronic circuits, particularly in high power applications. It provides efficient protection from high voltage surges, EMI/RFI noise suppression, and long-term energy storage. The device is well suited for a wide variety of applications, and its leadless, surface-mountable form factor allows for easy installation and enhanced design flexibility. Furthermore, its wide range of breakdown voltage and pulse power options allows for greater customization to meet specific circuit protection needs.

The specific data is subject to PDF, and the above content is for reference

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