MSMCJ75AE3/TR Allicdata Electronics
Allicdata Part #:

MSMCJ75AE3/TRMS-ND

Manufacturer Part#:

MSMCJ75AE3/TR

Price: $ 1.20
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMCJ75AE3/TR datasheetMSMCJ75AE3/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
600 +: $ 1.08817
Stock 1000Can Ship Immediately
$ 1.2
Specifications
Current - Peak Pulse (10/1000µs): 12.4A
Supplier Device Package: SMCJ (DO-214AB)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: --
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 121V
Voltage - Breakdown (Min): 83.3V
Voltage - Reverse Standoff (Typ): 75V
Bidirectional Channels: 1
Moisture Sensitivity Level (MSL): --
Type: Zener
RoHS Status: RoHS Compliant
Part Status: Active
Description

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TVS - Diodes

MSMCJ75AE3/TR Application Field and Working Principle

Transient Voltage Suppressor (TVS) diodes are often used in electronic circuit applications to protect the circuits against electrical transients that can be induced by either external or internal sources. These electrical transients, caused by effects such as lightning, electrostatic discharge (ESD), or over-voltage, can cause irreparable damage to the circuitry, and as such, TVS diodes are often used to prevent this damage occurring.

The MSMCJ75AE3/TR is a commonly used TVS diode, and is available in an SOT-143 plastic-molded package with a maximum operating temperature of 150°C. It is used in high-speed applications such as data communications, local area networks and computers in which high-speed data transfer is a main factor. It is also ideal for applications such as ethernet LANs, ISDN, ADSL, ESD, charging ports and telecom protection.

The working principle of the MSMCJ75AE3/TR is based on the Zener effect, a phenomenon which describes the reversibility of a p-n junction diode in which the electrical current is kept in balance by the presence of an external electric field. In the case of the MSMCJ75AE3/TR, the diode is designed to clamps transient voltage to a safe level, preventing further damage to the circuit.

When transients occur, the external electric field increases and the MSMCJ75AE3/TR will break down its initial breakdown voltage, thus allowing additional current to flow and preventing higher voltage levels of transients. As soon as the transient voltage has gone, the diode returns to its normal state and the current stops flowing, thus providing protection for the circuit.

In addition to its excellent protection features, the MSMCJ75AE3/TR also has a low reverse leakage current of less than 5μA, enabling it to be used in low-power applications, as well as a fast response time of less than 10μs, making it suitable for high-speed applications.

The MSMCJ75AE3/TR is an excellent choice for a wide range of applications and is an important circuit protection component in order to ensure that electronic circuits are protected against electrical transients.

The specific data is subject to PDF, and the above content is for reference

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