MSMCJLCE6.5AE3/TR Allicdata Electronics
Allicdata Part #:

MSMCJLCE6.5AE3/TRMS-ND

Manufacturer Part#:

MSMCJLCE6.5AE3/TR

Price: $ 3.28
Product Category:

Circuit Protection

Manufacturer: Microsemi Corporation
Short Description: TVS
More Detail: N/A
DataSheet: MSMCJLCE6.5AE3/TR datasheetMSMCJLCE6.5AE3/TR Datasheet/PDF
Quantity: 1000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
300 +: $ 2.98601
Stock 1000Can Ship Immediately
$ 3.28
Specifications
Current - Peak Pulse (10/1000µs): 100A
Supplier Device Package: SMCJ (DO-214AB)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Capacitance @ Frequency: 100pF @ 1MHz
Applications: General Purpose
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Series: Military, MIL-PRF-19500
Voltage - Clamping (Max) @ Ipp: 11.2V
Voltage - Breakdown (Min): 7.22V
Voltage - Reverse Standoff (Typ): 6.5V
Unidirectional Channels: 1
Moisture Sensitivity Level (MSL): --
Type: Zener
RoHS Status: RoHS Compliant
Part Status: Active
Description

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TVS (Transient Voltage Suppressor) Diodes are an important part of modern electronics. In many cases, they are used as a safeguard against power surges, which can cause significant damage to sensitive components. The MSMCJLCE6.5AE3/TR application field (TVS Diode) is designed to protect important components from power surges when connected in series with a load. The following will provide an overview of the working principle associated with the device.

The MSMCJLCE6.5AE3/TR application field consists of two components: a Zener diode (or PN junction diode) and a PN junction field effect transistor (FET). The Zener diode is designed to clamp the voltage levels across the PN junction FET. When an excessive voltage is applied to the PN junction FET, the voltage across the junction rises, resulting in current flowing through the Zener diode and limiting the voltage across the PN junction FET. This protects the PN junction FET and other components in the circuit from extreme voltage levels.

The Zener diode also acts as a voltage regulator by preventing too much current from flowing through the PN junction FET. When the voltage across the PN junction FET is less than the Zener breakdown voltage, the Zener diode becomes forward-biased, turning it on and allowing current to flow through the PN junction FET. This current maintains the voltage levels across the PN junction FET and prevents it from reaching damaging levels. The Zener diode also limits the current flowing through the PN junction FET, further protecting important components.

The PN junction FET is also an important element in the MSMCJLCE6.5AE3/TR. It is designed to remain off until the voltage exceeds the breakdown voltage of the Zener diode.Once the voltage across the PN junction FET reaches this level, the FET is turned on and current begins to flow. The current flows through the PN junction FET and dissipates the extra energy in the form of heat, limiting the voltage across the PN junction FET. This process protects important components in the circuit by preventing them from being exposed to damaging levels of voltage.

The MSMCJLCE6.5AE3/TR application field provides an efficient and reliable way to protect important components from power surges. Its design ensures that the voltage across the PN junction FET is limited to safe levels. The Zener diode limits the amount of current that can flow through the PN junction FET, further protecting the important components in the circuit. Its combination of components and design make it a popular choice among engineers.

The specific data is subject to PDF, and the above content is for reference

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