MT25QL02GCBB8E12-0AAT

Series:	Automotive, AEC-Q100
Part Status:	Active
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	2Gb (256M x 8)
Clock Frequency:	133MHz
Write Cycle Time - Word, Page:	8ms, 2.8ms
Memory Interface:	SPI
Voltage - Supply:	2.7 V ~ 3.6 V
Operating Temperature:	-40°C ~ 105°C (TA)
Mounting Type:	Surface Mount
Package / Case:	24-TBGA
Supplier Device Package:	24-T-PBGA (6x8)

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction

MT25QL02GCBB8E12-0AAT is a Flash memory device from Micron, the leading global memory and storage solutions provider. It is specifically designed for applications that require high-speed computing and storage capability. This device is based on NAND flash technology and is ideal for applications such as automotive, embedded, networking, and industrial automation.

Application Field

MT25QL02GCBB8E12-0AAT is suitable for applications requiring high-speed computing and storage, such as automotive, embedded, networking, and industrial automation. The device is built using leading-edge NAND flash technology which is highly reliable and delivers an impressive write/erase performance. The device is available in the standard 8-pin SOIC package, which is well suited for designs requiring a small form factor due to its limited space. It is also available in a wide range of operating temperature ranges, making it suitable for industrial applications as well.In addition, the device is designed for applications requiring very high reliability and endurance. It provides data integrity with its built-in Error Correction Code (ECC) functionality and supports self-management of program/erase cycles. It is also built to withstand extreme temperatures and provides resistance against power-on reset and other reliability-related issues.

Working Principle

The MT25QL02GCBB8E12-0AAT device operates on NAND flash technology which enables it to provide an impressive read/write performance. NAND flash technology is a non-volatile memory technology that stores data in floating gate transistors. Each cell in a NAND cell array consists of one or more transistors arranged in a series called a string. Reading data is done by applying a voltage across the source and drain of each cell and measuring the resulting current. Writing data is done by altering the voltage on the control gate of each cell and then applying the write pulse. Data is stored by trapping electrons in the floating gate of a transistor. This process is called Fowler-Nordheim tunneling. The device also provides a number of features to improve its performance. These include built-in ECC circuitry, program/erase cycle management, and wear-leveling algorithms. The device also incorporates power failure protection and power-on reset to ensure data integrity.

Conclusion

MT25QL02GCBB8E12-0AAT is an ideal memory device for applications requiring high-speed computing and storage, such as automotive, embedded, networking, and industrial automation. This NAND flash-based device is highly reliable and is able to withstand extreme temperatures. It is available in the standard 8-pin SOIC package and also comes with built-in Error Correction Code (ECC) functionality to ensure data integrity. It also provides a number of features to improve its performance, such as program/erase cycle management and wear-leveling algorithms.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description