MT25QL128ABA8E12-0AAT Allicdata Electronics
Allicdata Part #:

MT25QL128ABA8E12-0AAT-ND

Manufacturer Part#:

MT25QL128ABA8E12-0AAT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 24TPBGA
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz ...
DataSheet: MT25QL128ABA8E12-0AAT datasheetMT25QL128ABA8E12-0AAT Datasheet/PDF
Quantity: 72
1 +: 0.00000
Stock 72Can Ship Immediately
$ 0
Specifications
Series: Automotive, AEC-Q100
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Supplier Device Package: 24-T-PBGA (6x8)
Description

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Introduction

MT25QL128ABA8E12-0AAT is an advanced NOR serial flash memory that provides high storage capacity and reliable performance. It is widely used in various fields due to its low power consumption, wide temperature range and robust performance. The memory can be used in consumer applications such as wearables, mobile phones, tablets, audio players, navigations and others. It is also used for industrial, automotive and automotive-eco applications.The MT25QL128ABA8E12-0AAT memory is based on a quad 3.3V supply voltage and takes only 1.8V power. It has an I/O voltage range of 1.6V to 3.3V. With the flexibility of data transfer, the device support multiple clock speeds ranging form 15MHz to 52MHz, allowing a wide range of frequency selection. The memory also supports erasing, programming and reading with a minimum unit of a byte.

Memory Architecture

MT25QL128ABA8E12-0AAT is fabricated with a dual-transistor cell array and does not require external components to operate. This provides a reliable and cost-effective solution for all applications. The memory architecture is based on an asymmetric array of memory cells. Each cell contains two transistors and can store a single bit of data. It also has an integrated power-on reset, which automatically resets the registers to predetermined values.The device features an advanced data protection feature, which prevents accidental erasing or overwriting of protected memory. This is done by using two commands, Block Protection and Region Protection. Block Protection prevents data from being erased, while Region Protection prevents data from being written to protected areas.

Power Management

The MT25QL128ABA8E12-0AAT memory features a power-saving mode, which allows the device to enter Standby Mode automatically when the programmed memory is not accessed. The device also supports a variety of power management features that are easy to use and highly reliable. These include Dynamic Power Management, Power-On Reset, and Programmable Wake-up Timer.With Dynamic Power Management, the device reduces the standby current to less than 5μA. This is done by disabling transistors that are not in use, thus reducing the power consumption. Furthermore, the Power-On Reset function sets the device to a predetermined operational state immediately after power is applied.

MT25QL128ABA8E12-0AAT Applications and Working Principle

The MT25QL128ABA8E12-0AAT memory is commonly used in a wide range of applications, including wearables, mobile phones, tablets, audio players, and navigations. It is also used for automotive systems, industrial applications and other applications.The working principle of this type of memory is based on Non-Volatile Memory cells. Each cell consists of an array of transistors that are controlled by the processor to store a bit of data. This data can be written, erased, or read and it is maintained even when the power is removed. A write and erase operation involves the expansion and contraction of a silicon dioxide layer, which is formed and removed by a small pulse of electric current. This operation allows the cells to be programmed and then read, and this is the basis of Non-Volatile Memory.

Conclusion

The MT25QL128ABA8E12-0AAT is an advanced NOR serial flash memory with high storage capacity and reliable performance. It is extensively used in numerous applications due to its durability, low power consumption, and wide temperature range. The device also has advanced power and data protection technologies, which ensure the safe operation of the memory. It is also easy to use and has a minimum unit of a byte for erasing, programming, and reading operations.

The specific data is subject to PDF, and the above content is for reference

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