MT25QU128ABA1ESE-MSIT TR Allicdata Electronics
Allicdata Part #:

MT25QU128ABA1ESE-MSITTR-ND

Manufacturer Part#:

MT25QU128ABA1ESE-MSIT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M SPI 133MHZ 8SOP2
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8) SPI 133MHz ...
DataSheet: MT25QU128ABA1ESE-MSIT TR datasheetMT25QU128ABA1ESE-MSIT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8)
Clock Frequency: 133MHz
Write Cycle Time - Word, Page: 8ms, 2.8ms
Memory Interface: SPI
Voltage - Supply: 1.7 V ~ 2 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.209", 5.30mm Width)
Supplier Device Package: 8-SOP2
Description

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There are many memory types in the computer world, and one of them is the MT25QU128ABA1ESE-MSIT. This is a 128MB Quad SPI Flash memory, which is used in a wide range of applications. It is a high-performance memory device that offers excellent read/write speed and low power consumption.

The MT25QU128ABA1ESE-MSIT was designed to meet the needs of today’s evolving digital world. It is a small memory device that offers large capacity, high-speed transfers and low power consumption. Additionally, it supports a variety of data interfaces, making it ideal for applications requiring fast response and reliability. With its quad SPI interface, the device is able to transfer data at a maximum rate of two megabytes per second.

The MT25QU128ABA1ESE-MSIT is designed for a variety of applications, including embedded systems, industrial automation and networking systems. It can be used for storing data, code, or small-scale memory. It is also an ideal application for wearable technology, where high-performance, low-power consumption is required.

The MT25QU128ABA1ESE-MSIT has several key features that make it a great choice for a memory device. These features include a static random access memory (SRAM) controller, an SDRAM controller, a flash translation layer (FTL), a PCI Express bus interface, and a logic layer (LL). It also supports two-wire and four-wire interface, which allows for faster data transfer.

The MT25QU128ABA1ESE-MSIT is a very reliable device as it is built with a high level of quality. It is manufactured in an ISO/TS 16949 certified factory that produces ICs, analog and digital memory devices, and embedded systems. With its high quality components and construction, the MT25QU128ABA1ESE-MSIT is designed for long-term use and is resistant to damage from environmental factors.

The MT25QU128ABA1ESE-MSIT has a wide operating voltage range from 2.3V to 3.6V, making it suitable for a variety of applications. It also supports 4K and 8K read/write operations in a single go, which makes it great for storing large amounts of data. The device also supports multiple power modes, allowing for better power efficiency.

The MT25QU128ABA1ESE-MSIT also features a programmable FTL, which simplifies programming and maintaining the device. With this feature, the embedded code can be customized to better meet user needs. Additionally, the device provides secure booting and data encryption techniques, making it ideal for an array of secure applications.

The MT25QU128ABA1ESE-MSIT is an excellent choice for a memory device in many applications. It provides fast read/write performance, low power consumption, and wide operating voltage. Additionally, it features advanced features such as secure booting and data encryption, allowing for secure operation of digital systems and services. With its excellent features and reliability, the MT25QU128ABA1ESE-MSIT is a great choice for any application requiring an efficient and reliable memory solution.

The specific data is subject to PDF, and the above content is for reference

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