MT28EW512ABA1HPC-1SIT TR Allicdata Electronics
Allicdata Part #:

MT28EW512ABA1HPC-1SITTR-ND

Manufacturer Part#:

MT28EW512ABA1HPC-1SIT TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 512M PARALLEL 64LBGA
More Detail: FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Pa...
DataSheet: MT28EW512ABA1HPC-1SIT TR datasheetMT28EW512ABA1HPC-1SIT TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 512Mb (64M x 8, 32M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Supplier Device Package: 64-LBGA (11x13)
Description

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Memory is an important component in any computing system. It stores data, programs and instructions that are used by the processor and other components of the system. The MT28EW512ABA1HPC-1SIT is an advanced non-volatile memory IC from Macronix, designed for use in a wide range of small and portable devices. It is a high-performance memory device that offers high performance, low power consumption and a small package size.

The MT28EW512ABA1HPC-1SIT is based on the manufacturing technology of the NOR flash memory, which is specifically designed to meet all the application requirements of portable applications, such as GPS, automotive infotainment systems, media players and other low power, small form factor applications. It is an ideal choice for embedded systems requiring a small package size and low power consumption.

The MT28EW512ABA1HPC-1SIT has 2048 Mbit of NOR flash memory organized as 4 banks of 512 Mbit, each having upto 674 sectors. The device supports 4-bit ECC, 16-bit page read and write operations, and a page size of 512 bytes. In addition, it features advanced features such as error correction, dynamic defect management, and wear leveling to ensure reliable performance. The device supports the full range of operating temperature ratings from 0°C to 70°C and is compliant with the industrial temperature range.

The working principle of MT28EW512ABA1HPC-1SIT is based on the use of a non-volatile memory cell, which stores data even when power is removed from the device. The memory cell is encoded in a 4-bit words, and is composed of four transistors. The use of a four-bit word ensures that each bit has a minimum of two decimal digits, providing a good level of accuracy in data storage. When data is stored, the MT28EW512ABA1HPC-1SIT normally performs a basic data verification and encoding process before it is written to the memory cell.

The MT28EW512ABA1HPC-1SIT has an embedded read and write controller with advanced error correction, dynamic defect management and wear leveling features to ensure reliable performance. In addition, it supports multiple bit error correction with data correction capability up to 8 bits. Furthermore, the device has multiple levels of Error Correction Code (ECC) built into it in order to correct errors in the data. In addition, it supports a number of programming algorithms specific to low-density NOR flash memories.

The MT28EW512ABA1HPC-1SIT is ideal for applications requiring high performance and low power consumption. It is well suited for the automotive infotainment systems, media players and other low power, small form factor applications. The device features a low power consumption of 6W for a full-speed operation, and a small package size of 8mm x 8mm. With its advanced features and fast programming time, the MT28EW512ABA1HPC-1SIT makes it an ideal choice for embedded systems.

The specific data is subject to PDF, and the above content is for reference

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