Memory

MT28HL16GPBB3EBK-0GCT is an integrated circuit featuring a high-performance, low-power, hybrid ferroelectric random access memory (FeRAM). It is ideal for memory addressing and storage of popular volatile memory types such as Flash, DRAM, SRAM and Flash. Its application field ranges from industrial to automotive.

Application Field

MT28HL16GPBB3EBK-0GCT is designed for applications that require compact memory with low power consumption. It’s particularly suitable for embedded systems with safety-critical requirements as its non-volatile and ultra-reliable properties enable automotive memory systems to operate without subsystems or batteries. Likewise, this IC is popular for technical data storage, instrumentation control, and medical systems.

The IC is suitable for use in numerous applications such as transportation and logistics, industrial automation, medical, environmental monitoring, smart grid, automotive, robotics, telecom and internet of things. It can also be used in military applications such as aerospace, telemetry, surveillance, navigation and targeting.

Working Principle

The MT28HL16GPBB3EBK-0GCT operates as a hybrid ferroelectric RAM. It combines the benefits of FRAM and SRAM to offer better performance, higher capacity and improved cost. The device contains two different memory systems, an SRAM and FRAM, on the same die.

The SRAM is configured as a standalone 8KB 4B×32 array and is used for read and write operations. Whereas, the 6KBx4B 32×4 array FRAM is used for programming the device with data. Data written to the SRAM is copied to the FRAM for storage and subsequently transferred to the SRAM for access. The FRAM remains unaffected by device power on or off. The device has an ultra-low power consumption of 0.019 mA/MHz.

Thehigh-density, hybrid FeRAM technology used in the MT28HL16GPBB3EBK-0GCT ensures faster performance and fewer resources are required for programming. The device also features unique features such as self-refresh, arrayed entry architecture, a high-speed Non-Volatile RAM Interface, and Secure Data Transfer.

Conclusion

MT28HL16GPBB3EBK-0GCT is a high-performance, low-power hybrid ferroelectric random access memory (FeRAM) IC. This device is a perfect choice for applications requiring higher capacity and fast access time. Its non-volatile and ultra-reliable properties make it suitable for memory storage in industrial, automotive and aerospace applications.