MT28F008B3VP-9 B

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Memory Type:	Non-Volatile
Memory Format:	FLASH
Technology:	FLASH - NOR
Memory Size:	8Mb (1M x 8)
Write Cycle Time - Word, Page:	90ns
Access Time:	90ns
Memory Interface:	Parallel
Voltage - Supply:	3 V ~ 3.6 V
Operating Temperature:	0°C ~ 70°C (TA)
Mounting Type:	Surface Mount
Package / Case:	40-TFSOP (0.724", 18.40mm Width)
Supplier Device Package:	40-TSOP I
Base Part Number:	MT28F008B3

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Introduction

MT28F008B3VP-9 B is a family of memory products from Micron Technology Inc. The devices provide non-volatile flash memory with fast data read and program operations. It can be used for a wide range of applications, such as storing program code, data, and system configuration information in embedded systems. This device also offers a high level of endurance, allowing it to handle a large number of erase/write cycles without any performance degradation.

Application Field

MT28F008B3VP-9 B is designed for a variety of applications such as consumer, industrial, automotive, and networking. It is ideal for embedded systems, consumer electronics and automotive applications where operating voltages are as low as 1.7V to ensure safe operation and low power consumption.Due to its small size and power-efficiency, the device is often used in products such as mobile phones, PDAs, digital cameras, MP3 players, and other products that require storage of large amounts of data. The device can also be used in applications such as digital media players, set-top boxes, medical equipment and automotive control systems where reliability and long-term data retention are important.

Working Principle

MT28F008B3VP-9 B uses a non-volatile memory structure that includes blocks of memory divided into erase blocks, program blocks, and pages. The device is capable of operations such as reading, programming, erasing, and status checking. Each of these operations is managed via a set of commands written to a set of special registers that control the operation of the device.To read data, the user sends a read command and address to the device, which reads the necessary data stored in the specified location. To program data, the user sends a program command and address followed by the data which needs to be written to the memory. To erase data, the user sends an erase command and address followed by the size of data which needs to be erased.The device is powered by voltage levels as low as 1.7V and is capable of data transfer rates of up to 50Mbits/second. In addition, the device supports write protect, three-state outputs, and advanced protection features such as write protect and power-off protection.

Conclusion

MT28F008B3VP-9 B is a memory product from Micron which is designed for a variety of applications, including consumer, industrial, automotive and networking. The device is capable of operations such as reading, programming, erasing, and status checking, and is powered by voltage levels as low as 1.7V. With its fast data transfer rate, write protect, and advanced protection features, the device is ideal for a number of applications that require reliable long-term data retention and low power consumption.

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