MT28EW128ABA1HPN-0SIT Allicdata Electronics
Allicdata Part #:

MT28EW128ABA1HPN-0SIT-ND

Manufacturer Part#:

MT28EW128ABA1HPN-0SIT

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC FLASH 128M PARALLEL 56VFBGA
More Detail: FLASH - NOR Memory IC 128Mb (16M x 8, 8M x 16) Par...
DataSheet: MT28EW128ABA1HPN-0SIT datasheetMT28EW128ABA1HPN-0SIT Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tray 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: FLASH
Technology: FLASH - NOR
Memory Size: 128Mb (16M x 8, 8M x 16)
Write Cycle Time - Word, Page: 60ns
Access Time: 95ns
Memory Interface: Parallel
Voltage - Supply: 2.7 V ~ 3.6 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 56-VFBGA
Supplier Device Package: 56-VFBGA (7x9)
Description

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Memory plays an important role in today\'s computing technology and continues to evolve at a rapid rate. MT28EW128ABA1HPN-0SIT is a 128Mbit (16MByte) NAND Flash memory device designed for high-performance applications. It is one of the most advanced Flash storage solutions available and offers a greater level of density and performance than its predecessors.

The MT28EW128ABA1HPN-0SIT memory is ideal for applications requiring large storage capacity, superior speed and advanced error correction capabilities. It can store up to 2 terabytes of data, making it ideal for applications such as advanced medical imaging, network storage, video streaming and solid-state drives. The device is also suitable for a wide range of consumer applications such as digital cameras, camcorders, and digital audio recorders.

The device is manufactured using the advanced 43nm Advanced Multi-Level Cell (MLC) technology, which offers high performance at low power consumption. It is available in a package that is small in size and offers the highest density. The device sports an innovative write technology called ONFI (Open NAND Flash Interface) that allows designers to quickly access data with great reliability and reduce system power consumption. ONFI also supports SDR (Single Data Rate) and high-end DDR2, allowing higher clock speeds while reducing power usage.

The MT28EW128ABA1HPN-0SIT offers advanced error detection and correction capabilities. It has two error correction options, 4-bit BCH and 8-bit BCH. This helps ensure reliable long-term storage of data by automatically correcting errors due to aging, temperature and other environmental factors.

In addition to its advanced error correction capabilities, the MT28EW128ABA1HPN-0SIT also offers superior write performance. It has an optimized write architecture that allows for faster programming cycles and improved write performance. This makes the device ideal for mission-critical applications. It also supports advanced wear-leveling techniques, which allows for longer device life.

The MT28EW128ABA1HPN-0SIT also includes advanced reliability features including Error Detection and Correction, ECC page rewrite, and Bad-Block Management. This allows for more reliable operation by preventing data corruption and failure as a result of errors or bad blocks.

The MT28EW128ABA1HPN-0SIT is a versatile memory device that offers superior performance, advanced features and a great level of reliability. It is suitable for a wide range of applications and is one of the most advanced Flash storage solutions available.

The specific data is subject to PDF, and the above content is for reference

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