MT3S111(TE85L,F)

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	NPN
Voltage - Collector Emitter Breakdown (Max):	6V
Frequency - Transition:	11.5GHz
Noise Figure (dB Typ @ f):	1.2dB @ 1GHz
Gain:	12dB
Power - Max:	700mW
DC Current Gain (hFE) (Min) @ Ic, Vce:	200 @ 30mA, 5V
Current - Collector (Ic) (Max):	100mA
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-236-3, SC-59, SOT-23-3
Supplier Device Package:	S-Mini

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Introduction

The MT3S111(TE85L,F) is a NPN silicon RF transistor that is designed for use in RF applications. It is a type of BJT (Bipolar Junction Transistor) which is used to amplify signals. It has an excellent low noise figure, wide bandwidth, and a very high gain. The MT3S111(TE85L,F) is an ideal solution for a wide range of applications including wireless communications, medical imaging, and automatic test equipment.

Design and Components

The MT3S111(TE85L,F) transistor is a three-terminal NPN silicon-based device and is available in three different packages, a TO-92 package, an SC-59 package and an SOIC-8 package. The TO-92 package is the most common package and is available in both through-hole and surface mount device versions. It consists of a ceramic base, a metal lid and an encapsulated lead frame. The transistor is constructed in a single layer on a silicon dioxide (SiO2) substrate. The MT3S111(TE85L,F) has an operating range from -55 to 120°C, a maximum collector-emitter voltage of 200 V and a collector current of 0.5 A. The device is capable of operating at a maximum frequency of 250MHz. The transistor has a voltage gain of 15 (Minimum) to 40 (Maximum), a power output of 0.2 W, a noise figure of 2.4 dB and a maximum transition frequency of 25 MHz.

Applications and Uses

The MT3S111(TE85L,F) transistor is used in a variety of applications including wireless communication systems, medical imaging, automatic test equipment and microwave circuitry. The device is ideal for use in high-frequency amplifiers, oscillators and switches operating in the gigahertz range. It is also used in lower frequency applications such as receivers and IF amplifiers as well as audio amplifiers and power supplies.

Working Principle

A transistor is essentially a current-controlled, three-terminal semiconductor device. It is constructed of two p-type and one n-type semiconductor materials. The MT3S111(TE85L,F) transistor is an NPN transistor in which the negative charge carriers (electrons) are the majority carriers. The base terminal of the transistor is connected to the n-type material and is used to control the current flow between the collector and emitter terminals. When a signal is applied to the base terminal, it creates an electric field which attracts the minority carriers, or holes, from the p-type material to the n-type material. This increases the current flow between the collector and emitter terminals, thus amplifying the signal. The amount of current that is allowed to flow through the transistor at any given time is controlled by the gain of the device. The higher the gain, the more current that will flow through the device.

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