MT3S113(TE85L,F)

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RF transistors are a type of active electronic device commonly used in different types of modulated radio frequency systems for amplification, switching, and sensing applications. Of these, the MT3S113 (TE85L,F) transistor is a high-frequency silicon NPN epitaxial planar bipolar junction transistor (BJT) from Mitsubishi Electric Corporation. It is a high-performance transistor that can be used in low-noise amplifiers, RF and microwave oscillators, RF mixers, band-pass amplifiers, and other RF applications.

The MT3S113 has an absorbent glass metal (AGM) bonding system and features an optimized process technology for operating at frequencies up to 6 GHz. It operates in the frequency range of 300 MHz to 6 GHz and features an equivalent noise figure of 4.5 dB, a gain of 13 dB, and an associated P1dB of 11 dBm. Compared to its predecessor, MT3S113 has additional features like improved linearity, higher breakdown voltage, better stability, and increased gain at high frequencies.

The MT3S113 transistor is composed of three signatures: two N-type materials for the emitter and collector, as well as a P-type material for the base. The N-type materials are meant to act as an emitter, while the P-type material acts as a base. They form a semiconductor junction when stacked up against each other and have the ability to control the passage of current.

When current is passed through the base, the electrons from the emitter move to the collector, thus creating a flow of current from the emitter to the collector. This type of transistor usually requires direct current (DC) applied to the base and is capable of boosting and reversing voltages, current, and power. In the case of the MT3S113 transistor, it is designed to handle the typically high power and RF signals and has a rated power dissipation of 500 mW.

MT3S113 transistors are mainly used in applications needing high voltage breakdown, high current gain, and broad frequency range. This makes them suitable for use in amplifiers, oscillators, attenuators, modulators, switches, and other sensitive radio frequency applications. One typical application is an MCU-based bandpass amplifier. It takes input signals in the range of 0 to 4 GHz and amplifies them with a maximum gain of 9 dB and a 3 dB cut-off frequency of 3.5 GHz. This transistor is also used in RF links, RF oscillators, high-power amplifiers, as well as other RF and microwave components.

Overall, the MT3S113 is an advanced and reliable bipolar junction transistor that can be used for a variety of high-frequency circuit applications. It has a high voltage breakdown, a high gain, and a wide frequency range, which make it suitable for use in different types of demanding RF circuits. Moreover, its AGM bonding system and optimized process technology ensure excellent performance in terms of signal gain and noise levels.

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