| Allicdata Part #: | MT3S16U(TE85LF)TR-ND |
| Manufacturer Part#: |
MT3S16U(TE85L,F) |
| Price: | $ 0.07 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | TRANS RF NPN 5V 1GHZ USM |
| More Detail: | RF Transistor NPN 5V 60mA 4GHz 100mW Surface Mount... |
| DataSheet: | MT3S16U(TE85L,F) Datasheet/PDF |
| Quantity: | 3000 |
| 3000 +: | $ 0.06350 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Transistor Type: | NPN |
| Voltage - Collector Emitter Breakdown (Max): | 5V |
| Frequency - Transition: | 4GHz |
| Noise Figure (dB Typ @ f): | 2.4dB @ 1GHz |
| Gain: | 4.5dBi |
| Power - Max: | 100mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 5mA, 1V |
| Current - Collector (Ic) (Max): | 60mA |
| Operating Temperature: | 125°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | SC-70, SOT-323 |
| Supplier Device Package: | USM |
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The MT3S16U(TE85L,F) is an integrated silicon bipolar non-saturated transistor specifically designed for radio-frequency (RF) applications. The transistor offers wide-band performance and delivery at the highest gain in its categories. It has the ability to drive polarized loads efficiently and is suitable for use in small-signal amplifiers and oscillators.
The MT3S16U(TE85L,F) is a three-terminal device with an emitter, collector and base pins. The emitter is set to the negative end of the supply voltage, while the collector is connected to the positive supply voltage through a load. The base terminal is used to control the current flow between the emitter and collector terminals. As the current through the base increases, the current flow through the device increases and generates power amplification.
The key features of the MT3S16U(TE85L,F) depend on its wide-band operation, high gain, and high efficiency. In comparison to other devices in its category, it is able to delivers 15dB higher gain in the frequency range of 2GHz to 4GHz. In addition, the device offers low output impedance, high reliability, low noise, and high linearity. All these features guarantee excellent performances in RF applications.
As a oscillator the MT3S16U(TE85L,F) has the ability to operate at a high frequency range up to 4 GHz offering off high gain for linearity and low noise characteristics. It also offers low power consumption, small size and low cost. In general, it is suitable for use in various RF communication applications such as GSM/CDMA, GPS, Bluetooth/Wi-Fi, microwave links and CATV/DTV systems.
In conclusion, the MT3S16U(TE85L,F) is suitable for use in a range of RF applications such as amplified remote controls and mobile communication systems. It offers the highest gain in its category, low output impedances, high reliability and low noise characteristics. By delivering wide-band operation, high gain and high efficiency, this integrated device stands out as one of the best RF solutions for small-signal amplifier and oscillator applications.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT3S16U(TE85L,F) | Toshiba Semi... | 0.07 $ | 3000 | TRANS RF NPN 5V 1GHZ USMR... |
| MT3S20TU(TE85L) | Toshiba Semi... | 0.0 $ | 1000 | TRANS RF NPN 7GHZ 80MA UF... |
| MT3S113TU,LF | Toshiba Semi... | 0.18 $ | 6000 | RF SIGE HETEROJUNCTION BI... |
| MT3S20P(TE12L,F) | Toshiba Semi... | 0.0 $ | 1000 | TRANS RF NPN 12V 1GHZ PW-... |
| MT3S113(TE85L,F) | Toshiba Semi... | 0.2 $ | 6000 | RF SIGE HETEROJUNCTION BI... |
| MT3S113P(TE12L,F) | Toshiba Semi... | 0.29 $ | 1000 | RF SIGE HETEROJUNCTION BI... |
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| MT3S111(TE85L,F) | Toshiba Semi... | 0.18 $ | 6000 | RF SIGE HETEROJUNCTION BI... |
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MT3S16U(TE85L,F) Datasheet/PDF