MT3S20P(TE12L,F) Allicdata Electronics
Allicdata Part #:

MT3S20P(TE12LF)TR-ND

Manufacturer Part#:

MT3S20P(TE12L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS RF NPN 12V 1GHZ PW-MINI
More Detail: RF Transistor NPN 12V 80mA 7GHz 1.8W Surface Mount...
DataSheet: MT3S20P(TE12L,F) datasheetMT3S20P(TE12L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.45dB @ 1GHz
Gain: 16.5dB
Power - Max: 1.8W
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Supplier Device Package: PW-MINI
Description

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The MT3S20P(TE12L,F) is a transistor developed for use in the radio frequency (RF) field. It is a bipolar junction transistor (BJT) and is used for switching, amplifying, and modulation applications. It is designed to withstand high levels of power, up to 20W, and is capable of withstanding temperatures of up to 200°C. The MT3S20P(TE12L,F) is a widely used transistor in the RF industry, due to its reliable performance, robust design, and easy to use packaging.

The MT3S20P(TE12L,F) consists of three main components; the emitter, the base, and the collector. The emitter is the terminal where the electrons travel from to the base, which is the middle section. The base can be thought of as a control element; it will allow the amount of current passing through the transistor to be controlled by varying the voltage applied. The collector is the opposite terminal of the emitter; the electrons travel from the emitter to the collector, usually carrying the amplified signal.

The MT3S20P(TE12L,F) is designed to be used in a variety of RF applications, such as amplifying, switching, and modulation. In amplifying applications, the transistor takes an input signal and amplifies it to a certain level. By varying the input signal, it is possible to control the output of the transistor, thus allowing for precise control over the amplified signal. In switching applications, the transistor can be used to turn a device on or off, depending on the input signal. In modulation applications, the transistor can be used to frequency shift a radio signal or to drive a speaker.

The MT3S20P(TE12L,F) is a versatile transistor, capable of performing many different functions. This makes it an ideal choice for a wide range of applications, from audio to RF. Its reliability and robust design make it the perfect choice for any RF based system. Its easy to use packaging and wide availability make it a reliable and cost-effective solution for any application.

The specific data is subject to PDF, and the above content is for reference

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