| Allicdata Part #: | MT46H128M16LFDD-48IT:C-ND |
| Manufacturer Part#: |
MT46H128M16LFDD-48 IT:C |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 2G PARALLEL 60VFBGA |
| More Detail: | SDRAM - Mobile LPDDR Memory IC 2Gb (128M x 16) Par... |
| DataSheet: | MT46H128M16LFDD-48 IT:C Datasheet/PDF |
| Quantity: | 1000 |
| Series: | -- |
| Packaging: | Tray |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR |
| Memory Size: | 2Gb (128M x 16) |
| Clock Frequency: | 208MHz |
| Write Cycle Time - Word, Page: | 14.4ns |
| Access Time: | 5.0ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 60-VFBGA |
| Supplier Device Package: | 60-VFBGA (8x9) |
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Memory – MT46H128M16LFDD-48 IT:C Application Field and Working Principle
Memory is an important part of modern computing, and is found everywhere from desktop computers to embedded applications, from cell phones to supercomputers. Different types of memory serve many different purposes, and MT46H128M16LFDD-48 IT:C memory is a powerful combination of speed and density, designed to optimize performance of high speed applications. So what is the application field and working principle of this type of memory, and how can it be used?
Application Field
MT46H128M16LFDD-48 IT:C is a DRAM (dynamic random access memory) with a DDR3 interface, designed to enable high speed applications in the latest generation of servers and computing platforms. It is available in a range of densities and speeds, ranging from 2GB to 16GB, with data transfer rates up to 1866 MT/s, and supports a wide range of operating temperatures. It has a low power consumption (1.50V), and is optimized for high density memory systems, and is compliant with JEDEC standards. As such, the MT46H128M16LFDD-48 IT:C can be used in a variety of embedded and communication applications, from network connectivity to industrial instrumentation and automation control to commercial storage solutions.
Working Principle
The purpose of MT46H128M16LFDD-48 IT:C memory is to provide a high speed, low power memory system that is optimized for the latest generation of computing platforms. The core working principle of the MT46H128M16LFDD-48 IT:C is built around the concept of dynamic random access memory (DRAM), which offers faster read/write speeds compared to other types of memory. This type of memory relies on cells that are charged or discharged in order to store data, and are then read or written in order to provide data to the user. The MT46H128M16LFDD-48 IT:C utilizes a DDR3 SDRAM interface, allowing for faster speeds than previous generations of DRAM, and clocked at speeds of up to 1866 MT/s.
The MT46H128M16LFDD-48 IT:C memory also comes with advanced features such as on-chip ECC (error correction code) and a built-in thermal sensor for improved reliability, allowing for the detection and correction of errors in order to increase system stability. The memory operates at a low voltage of 1.50V, enabling higher speeds while also lowering power consumption, which makes it well suited for applications requiring high density, low power operation. The MT46H128M16LFDD-48 IT:C also has an integrated chip select (CS) feature, which helps to reduce noise and crosstalk while increasing read/write performance.
Conclusion
MT46H128M16LFDD-48 IT:C memory is a fast, powerful and efficient memory solution, designed to enable high speed applications in the latest generation of servers and computing platforms. It is optimized for high density, low power operation and complies with JEDEC standards, making it suitable for a wide range of embedded and communication applications. The MT46H128M16LFDD-48 IT:C memory is also equipped with advanced features such as ECC (error correction code) and a built-in thermal sensor, in order to ensure reliability and stability of the system. All in all, the MT46H128M16LFDD-48 IT:C memory is an excellent choice for applications requiring high speed and low power operation.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MT46V32M8P-5B IT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46H128M16LFDD-48 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFBQ-48 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46V256M4P-6T:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46H32M16LFBF-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
| MT46H32M32LFJG-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168VF... |
| MT46H64M32LFMA-5 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168WF... |
| MT46H128M32L2MC-5 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240WF... |
| MT46H8M32LFB5-75 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H16M32LFCM-5 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H16M32LFCX-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V16M16FG-6 L:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H8M32LFB5-6:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V128M8P-6T IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16P-6T IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8P-5B AIT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H128M16LFDD-48 IT:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFKQ-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168FB... |
| MT46V32M16FN-75 L:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H64M16LFCK-5 L IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
| MT46V64M4FG-75:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H16M32LFB5-5 IT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V64M8BN-6 L:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V256M4P-6T:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16BG-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M16TG-75 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H8M32LFB5-5 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H8M32LFB5-5:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V64M8P-5B:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8P-6T IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8FN-75 IT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16P-5B IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8TG-5B IT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
| MT46V16M16CY-5B AAT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
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MT46H128M16LFDD-48 IT:C Datasheet/PDF