| Allicdata Part #: | MT46V256M4P-6T:ATR-ND |
| Manufacturer Part#: |
MT46V256M4P-6T:A TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 1G PARALLEL 66TSOP |
| More Detail: | SDRAM - DDR Memory IC 1Gb (256M x 4) Parallel 167M... |
| DataSheet: | MT46V256M4P-6T:A TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT46V256M4 |
| Supplier Device Package: | 66-TSOP |
| Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Voltage - Supply: | 2.3 V ~ 2.7 V |
| Memory Interface: | Parallel |
| Access Time: | 700ps |
| Series: | -- |
| Clock Frequency: | 167MHz |
| Memory Size: | 1Gb (256M x 4) |
| Technology: | SDRAM - DDR |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tape & Reel (TR) |
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MT46V256M4P-6T:A TR Application Field and Working Principle
MT46V256M4P-6T is a type of dual-channel DDR3 SDRAM with a wide range of applications in the memory field. It provides excellent stability and reliability, making it a top choice for engineers working in mission-critical applications. The following sections will discuss the application fields and working principles of MT46V256M4P-6T.
Application Fields
MT46V256M4P-6T is used in a variety of memory applications, ranging from industrial to consumer. In industrial applications, it is often used for semiconductor memory and for computer memory. In consumer applications, it is used for high-end gaming consoles, smartphones and tablets.
MT46V256M4P-6T has excellent stability and reliability, making it ideal for applications that require high reliability and long operational lifetimes. Furthermore, it is also suitable for applications requiring optimal performance, such as server and storage systems, data centers and network appliances.
Additionally, MT46V256M4P-6T has a low power consumption profile and a wide temperature range, making it suitable for a variety of energy-sensitive applications.
Working Principle
MT46V256M4P-6T is a type of dual-channel DDR3 SDRAM, or double data rate synchronous dynamic random access memory, which is designed to store data at high speeds and then transfer it to the processor. DDR3 SDRAM is a synchronous type of dynamic random access memory (DRAM), meaning that the information stored in it is accessed in synchronization with the system clock.
MT46V256M4P-6T is unique because it has two channels, meaning that two bits of data can be transferred simultaneously at twice the speed of a single channel. This makes it possible for MT46V256M4P-6T to process and store more data in less time, thus making it a preferred choice for high-performance applications.
The data stored in DDR3 SDRAM chips is arranged in a specific pattern, which is known as the “page opening” order. This order is determined by the memory controller, which is an important component of systems with DDR3 SDRAM. The memory controller is responsible for fetching the data from the memory, applying the correct order to it, and transferring it to the processor in the appropriate format.
DDR3 SDRAM memory also has a mechanism for refreshing the data stored in it, known as “refresh cycles.” Refresh cycles are necessary because the data stored in DRAMs is held in a transient state that must be refreshed periodically to ensure data accuracy. During a refresh cycle, the memory controller refreshes the data stored in the memory chip, ensuring that the data remains intact and unchanged during operation.
In conclusion, MT46V256M4P-6T is an excellent choice for applications in the memory field. It provides exceptional stability and reliability, while also offering high performance and low power consumption. It incorporates two channels, allowing for data transfers that are twice as fast as those in single-channel designs. Additionally, it is equipped with a refresh cycle for keeping stored data accurate and up-to-date.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT46V32M8TG-6T L:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V32M16BN-5B:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16BG-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M8P-5B IT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46H128M16LFDD-48 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFBQ-48 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46V256M4P-6T:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46H32M16LFBF-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
| MT46H32M32LFJG-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168VF... |
| MT46H64M32LFMA-5 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168WF... |
| MT46H128M32L2MC-5 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240WF... |
| MT46H8M32LFB5-75 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H16M32LFCM-5 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H16M32LFCX-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V16M16FG-6 L:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H8M32LFB5-6:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V128M8P-6T IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16P-6T IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8P-5B AIT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H128M16LFDD-48 IT:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFKQ-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168FB... |
| MT46V32M16FN-75 L:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H64M16LFCK-5 L IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
| MT46V64M4FG-75:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H16M32LFB5-5 IT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V64M8BN-6 L:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V256M4P-6T:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16BG-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M16TG-75 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H8M32LFB5-5 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H8M32LFB5-5:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V64M8P-5B:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8P-6T IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8FN-75 IT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16P-5B IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8TG-5B IT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
| MT46V16M16CY-5B AAT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
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MT46V256M4P-6T:A TR Datasheet/PDF