MT46V16M16BG-6 IT:F TR

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Memory: MT46V16M16BG-6 IT:F TR

MT46V16M16BG-6 IT:F TR is a Synchronous Dynamic Random Access Memory (SDRAM). It belongs to the family of Double Data Rate (DDR) SDRAMs, the DDR2 SDRAMs. This memory is used in a wide range of applications and provides higher performance, greater density and lower power consumption, making it a popular choice for many modern memory applications.

MT46V16M16BG-6 IT:F TR stands for Multi-Layer Technology, 46-Volt, 16M16-Bit, 6 cycles/access, IT:F TR Extended Temperature range. It is a DDR2 type memory and has a data transfer rate of 800MHz, a memory clock frequency of 400MHz and a voltage rating of 1.8V for 200-pin Unbuffered DIMM (UDIMM).

Application Field

MT46V16M16BG-6 IT:F TR offers a wide range of applications due to its multiple advantages including higher performance, greater density and lower power consumption. Some of the common applications include:

• Battery operated devices such as smart phones, digital cameras, and PDAs.
• Embedded devices that require a high degree of memory retention.
• Industrial controllers and robots such as automated pick and place robots.
• Information appliances such as kiosks, point-of-sale terminals, and medical imaging devices.
• Servers, workstations, and other compute-intensive systems.
• Consumer Electronics such as gaming systems, set-top boxes, and home multimedia centers.

MT46V16M16BG-6 IT:F TR is a cost-effective solution for many of these applications as it requires significantly less power and has a longer lifetime. Moreover, its compact size allows for system integration across multiple product platforms. It offers high speeds, large capacity and increased bandwidth to support high bandwidth applications.

Working Principle

MT46V16M16BG-6 IT:F TR is a DDR2 type of SDRAM. It works on the principle of storing data in a two-dimensional array using a set of address mats. The DRAM consists of one or more banks of memory cells organized into an array of rows and columns. When data is written to or read from the memory, the control logic generates the necessary control signals and address sequencers to control the read and write operations.

The DRAM is organized by interleaving the data bits from one bank with the data bits from the other bank. The interleaved organization provides improved memory performance and an effective increase in the data transfer rate. The data transfer rate of MT46V16M16BG-6 IT:F TR can reach up to 800MHz.

To transfer data to and from the memory, the controller sends a series of address, command and data signals over the four signal pins of the data bus. The controller first sends a column address signal to select the column in the array where the data should be stored or retrieved. After the row address signal is sent, the controller either reads the data from the selected row or stores data to the selected row. Finally, after the data is stored or retrieved, the controller sends an acknowledgement signal to the DRAM to indicate that the data has been read or written.

MT46V16M16BG-6 IT:F TR is used in many applications due to its high performance, greater density and low power consumption. Its high data transfer rates enable high speed applications and its enhanced features enable it to easily fit into a wide range of platforms. Its extended temperature range ensures reliable performance in a variety of industrial environments.

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