MT46H128M32L2MC-5 WT:B

MT46H128M32L2MC-5 WT:B is a double data rate synchronous memory (SDRAM) manufactured by Micron Technology, Inc., a subsidiary of the American chip maker and global technology leader Micron Technology. It is designed for use in embedded applications and high-performance computing systems.The MT46H128M32L2MC-5 WT:B is a DDR2 16Mx64 memory device with a 2MByte (2 megabyte) capacity. It has a peak bandwidth of 6.4 GB/s and is designed for use in applications requiring high-speed and lower power consumption. It is based on a double data rate (DDR2) architecture and uses a 68-pin FBGA packaging.The MT46H128M32L2MC-5 WT:B has a nominal operating frequency range of 400 MHz to 533 MHz, a typical operating voltage range at 1.8V and a maximum operating frequency of 667 MHz. The device supports 4-bit prefetching and synchronous DRAM architecture. It utilizes a low power idle (LPI) mode and a wide data access cycle (WRD) range of 4 to 6.The MT46H128M32L2MC-5 WT:B provides an interface between the system controller and the SDRAM chip. It is suitable for applications such as network switches, routers, cellular base stations, consumer electronics, automotive solutions, and communication infrastructure.The primary application field of the M46H128M32L2MC-5 WT:B is in Embedded Systems. It is used to provide a fast and low-power way of storing data in embedded applications. It is also used in high-performance computing systems to provide reliable and consistent memory access rates and reduce overall power consumption. The working principle behind the MT46H128M32L2MC-5 WT:B is based on a synchronous dynamic random access memory (SDRAM) architecture. A SDRAM utilizes a two-clock system that allows simultaneous operations between the system controller and the memory device. This offers lower power consumption and higher performance than other types of DRAM.The MT46H128M32L2MC-5 WT:B uses an advanced architecture to ensure maximum data rate performance and power efficiency. This architecture supports burst read and write cycles, as well as multi-bank page mode operations. The device is also capable of executing multiple concurrent read and write operations.The MT46H128M32L2MC-5 WT:B is a highly-reliable device, offering a robust design and advanced ECC and power protection capabilities. The device also has high storage efficiency and a high-speed data access rate.To sum up, the MT46H128M32L2MC-5 WT:B is a synchronous DRAM device designed for use in embedded systems and high-performance computing systems. It utilizes a double data rate architecture, allowing for fast and low-power data storage. It is a reliable device, featuring advanced ECC and power protection capabilities, as well as high storage and data access rates.

MT46H64M32L2CG-5 IT:A	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 152VF...
MT46H64M32L2CG-5 IT:A TR	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 152VF...
MT46H16M32LFB5-6 AT:C TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 90V...
MT46V16M16TG-6T:F TR	Micron Techn...	0.0 $	1000	IC DRAM 256M PARALLEL 66T...
MT46H8M16LFCF-75 IT	Micron Techn...	--	1000	IC DRAM 128M PARALLEL 60V...
MT46V64M16P-75:A TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 66TSO...
MT46V256M4TG-75:A TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 66TSO...
MT46V64M8TG-75E:D TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 66T...
MT46V64M16TG-6T IT:A TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 66TSO...
MT46H16M16LFBF-5:H	Micron Techn...	--	1000	IC DRAM 256M PARALLEL 60V...
MT46H32M32LFB5-48 IT:B	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 90VFB...
MT46V32M4P-6T:D	Micron Techn...	0.0 $	1000	IC DRAM 128M PARALLEL 66T...
MT46V32M16BN-75:C TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 60F...
MT46H16M16LFBF-6 AT:H	Micron Techn...	0.0 $	1000	IC DRAM 256M PARALLEL 60V...
MT46H64M32LFCX-5 AT:B TR	Micron Techn...	0.0 $	1000	IC DRAM 2G PARALLEL 90VFB...
MT46H32M32LFB5-5 AT:B	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 90VFB...
MT46V64M8TG-75:D TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 66T...
MT46H16M32LFCM-6 L IT:B	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 90V...
MT46H256M32L4JV-5 IT:A	Micron Techn...	0.0 $	1000	IC DRAM 8G PARALLEL 168VF...
MT46V32M16TG-6T IT:F	Micron Techn...	--	1000	IC DRAM 512M PARALLEL 66T...
MT46V128M4FN-5B:F TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 60F...
MT46V16M16P-75:F	Micron Techn...	0.0 $	1000	IC DRAM 256M PARALLEL 66T...
MT46H32M32LFB5-5 AT:B TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 90VFB...
MT46V32M16P-5B IT:J TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 66T...
MT46H16M32LFB5-6 AIT:C	Micron Techn...	--	1000	IC DRAM 512M PARALLEL 90V...
MT46V64M16P-6T:A	Micron Techn...	--	1000	IC DRAM 1G PARALLEL 66TSO...
MT46V64M8P-6T:F	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 66T...
MT46H8M32LFB5-6:A TR	Micron Techn...	0.0 $	1000	IC DRAM 256M PARALLEL 90V...
MT46V32M16P-5B IT:F TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 66T...
MT46V32M8P-5B L:M	Micron Techn...	0.0 $	1000	IC DRAM 256M PARALLEL 66T...
MT46V64M8TG-5B:J TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 66T...
MT46H16M32LFCG-6 IT:B TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 152...
MT46V64M8FN-75 L:D	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 60F...
MT46V8M16P-6TIT:DTR	Micron Techn...	0.0 $	1000	IC DRAM 128M PARALLEL 66T...
MT46H16M32LFCM-6 L IT:B TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 90V...
MT46H16M32LFB5-5 IT:C TR	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 90V...
MT46H128M32L2MC-6 WT:B	Micron Techn...	0.0 $	1000	IC DRAM 4G PARALLEL 240WF...
MT46V64M8CV-5B IT:J	Alliance Mem...	1.68 $	1729	IC DRAM 512M PARALLEL 60F...
MT46H32M32LFJG-6 IT:A TR	Micron Techn...	0.0 $	1000	IC DRAM 1G PARALLEL 168VF...
MT46V32M16P-6T L IT:F	Micron Techn...	0.0 $	1000	IC DRAM 512M PARALLEL 66T...