MT46H16M32LFCM-6 IT:B TR Integrated Circuits (ICs)

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT46H16M32
Supplier Device Package:	90-VFBGA (10x13)
Package / Case:	90-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	1.7 V ~ 1.95 V
Memory Interface:	Parallel
Access Time:	5.0ns
Series:	--
Clock Frequency:	166MHz
Memory Size:	512Mb (16M x 32)
Technology:	SDRAM - Mobile LPDDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to MT46H16M32LFCM-6 IT:B TR

MT46H16M32LFCM-6 IT:B TR is a 16Mx32 Synchronous DRAM with fast page mode, developed by Micron Technology Inc. It provides a high performance of five clock cycles per row with a lower power consumption than other conventional DRAMs. This innovative technology enables the system designers to gain high data access speeds for applications requiring large amounts of data storage.

Application Field of MT46H16M32LFCM-6 IT:B TR

The MT46H16M32LFCM-6 IT:B TR is suitable for a wide range of applications, such as embedded systems, digital system, digital signal processor (DSP) systems, portable and hand held digital devices.For embedded systems, the MT46H16M32LFCM-6 IT:B TR can provide a high performance and low power consumption compared to other conventional DRAMs, which enables these systems to perform with improved performance and increased system resources.For digital systems, the MT46H16M32LFCM-6 IT:B TR provides a highly reliable and robust interface that is capable of supporting data throughput rates up to 800MB/s, while also providing low power consumption.For DSP systems, the MT46H16M32LFCM-6 IT:B TR can provide a high-speed and low latency for superior audio and video system performance.For portable and handheld digital devices, the MT46H16M32LFCM-6 IT:B TR can provide a high-speed, low power, and reliable interface for improved user experience.

Working Principle of MT46H16M32LFCM-6 IT:B TR

The MT46H16M32LFCM-6 IT:B TR utilizes a patented fast page mode technology that enables high data transfer rates while maintaining a low power consumption. This technology provides a high performance data access rate with a latency of just five clock cycles per row.The technology works by utilizing a combination of four memories - a single row buffer, a single array buffer, four data buffer blocks, and a single row buffer interface. The four memories are connected together in a cross-mapped fashion, allowing for an unprecedented access rate of up to 800MB/s.The technology also allows for efficient data refresh, ensuring that data is not lost or corrupted due to long idle periods. This is accomplished by utilizing an intelligent row refresh controller, which automatically refreshes rows upon their respective access period.Finally, the technology also allows for a burst read/write operation, which further contributes to the MT46H16M32LFCM-6 IT:B TR\'s high data transfer rate.

Conclusion

The MT46H16M32LFCM-6 IT:B TR is an innovative memory technology developed by Micron Technology Inc. This technology provides a high performance data access rate with a latency of just five clock cycles per row, enabling designers to develop systems with improved performance, lower power consumption, and improved user experience. Furthermore, the technology also features a robust data refresh system and burst read/write operations, allowing for an unprecedented data transfer rate of up to 800MB/s. As such, the MT46H16M32LFCM-6 IT:B TR is an ideal choice for a variety of applications, from embedded systems to digital, DSP, and portable/handheld digital devices.

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