MT46V32M16TG-5B IT:JTR Allicdata Electronics
Allicdata Part #:

1450-1348-2-ND

Manufacturer Part#:

MT46V32M16TG-5B IT:JTR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Alliance Memory, Inc.
Short Description: IC DRAM 512M PARALLEL 66TSOP
More Detail: SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 20...
DataSheet: MT46V32M16TG-5B IT:JTR datasheetMT46V32M16TG-5B IT:JTR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Memory Type: Volatile
Memory Format: DRAM
Technology: SDRAM - DDR
Memory Size: 512Mb (32M x 16)
Clock Frequency: 200MHz
Write Cycle Time - Word, Page: 15ns
Access Time: 700ps
Memory Interface: Parallel
Voltage - Supply: 2.5 V ~ 2.7 V
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 66-TSSOP (0.400", 10.16mm Width)
Supplier Device Package: 66-TSOP
Description

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Memory is an essential component of all electronics, playing a key role in data storage and data processing. MT46V32M16TG-5B IT:JTR is a memory device that is commonly used in consumer electronic applications such as set-top boxes, digital TVs, Blu-ray players, and other consumer electronics products. It combines the features of SRAM and DRAM, offering high-speed and low-power consumption.

MT46V32M16TG-5B IT:JTR is an asynchronous SDRAM (ASPIN) memory device, with a fixed data bus width of 32 bits. It offers a high-speed read burst length of 4 and 12 cycles and a write burst length of 4 cycles. It is available with 4, 8, 16, and 32 megabytes (MB) densities and offers a maximum clock speed of 166 MHz. The device also offers a low-power standby mode for idle periods, and maintains data in either static RAM or battery-backup, allowing data to remain available even after a power loss.

The device offers several features which make it suitable for a wide range of embedded applications, including an auto-precharge command, which allows the device to run faster and cooler, a single port read/write interface, and a row and column organization, which enables faster access to data in the memory. It also includes advanced error-correcting code (ECC) for improved data reliability and data integrity. Additionally, the device is offered in a range of industry-standard packages such as BGA, SO-DIMM, and PLCC.

The working principle of MT46V32M16TG-5B IT:JTR SDRAM is based on the notion of rows and columns. The device is organized as a matrix of cells, each consisting of one bit. These cells are then organized into rows and columns. When the device is accessed, the controller sends an address to the memory for the read or write operation. This address is then translated into a row and column address, and the corresponding data is read or written.

The device also utilizes pipelines in order to reduce the amount of wait time when accessing the memory. This means that once the address has been sent, the controller can begin the next operation while the memory controller is processing the previous. This reduces the number of clock cycles needed to access the memory, and in turn, increases performance.

In short, MT46V32M16TG-5B IT:JTR is an asynchronous SDRAM that combines the features of SRAM and DRAM, allowing for fast and low-power operation. It is organized as a matrix of cells, with each cell containing one bit of information. The device utilizes pipeline to reduce wait time, and incorporates advanced error-correcting code for improved data reliability and data integrity. It is widely used in consumer electronics products, and is available in a range of industry-standard packages.

The specific data is subject to PDF, and the above content is for reference

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