
Allicdata Part #: | MT46H64M32L2JG-5:A-ND |
Manufacturer Part#: |
MT46H64M32L2JG-5:A |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 2G PARALLEL 168VFBGA |
More Detail: | SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Para... |
DataSheet: | ![]() |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46H64M32 |
Supplier Device Package: | 168-VFBGA (12x12) |
Package / Case: | 168-VFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Memory Interface: | Parallel |
Access Time: | 5.0ns |
Series: | -- |
Clock Frequency: | 200MHz |
Memory Size: | 2Gb (64M x 32) |
Technology: | SDRAM - Mobile LPDDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tray |
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Memory, specifically Static Random Access Memory (SRAM), is an essential component of microprocessors and digital systems used in data storage and processing. One such type of SRAM, the MT46H64M32L2JG-5:A, is used in a wide variety of applications.
The MT46H64M32L2JG-5:A is a 512 Mb SRAM. This SRAM features a differential read/write access time of 6 ns, address clock frequency of 200 MHz, and power consumption of 1.95 W. This device is available in a PGA packages in 8 and 16-pin packages.
The MT46H64M32L2JG-5:A has a number of use cases in various industries. In embedded applications, the SRAM can be used to buffer data, store histogram data, and act as an ongoing memory log. It can also be used as an L2 cache for low-power mobile devices. For networking applications, the SRAM can be used for packet buffering for service providers, as well as for supporting Layer 2/3 data-forwarding and classification.
In addition to its practicality in applications, the MT46H64M32L2JG-5:A also comes with a wide range of features. Its low-voltage operation consumes very little power, making it perfect for power-sensitive applications. Its differential clock and address inputs provide high speed and noise immunity. It also has on-chip ECC for data integrity.
The working principle behind the MT46H64M32L2JG-5:A is identical to conventional SRAM. It consists of a memory array which is organized in a number of addressable locations, and each location can store a single bit of information. The array is connected to the CPU via control and data buses. To perform a read or write operation, the CPU will supply the memory address (via the address bus) and initiate the read or write signal (via the control bus). The memory array will then determine the location to be accessed, and will either read or write the data accordingly.
The MT46H64M32L2JG-5:A is a versatile, low-power SRAM with a wide range of features. It is ideal for embedded, networking, and power-sensitive applications. Its working principle is identical to traditional SRAM circuits, making it easy to integrate with traditional digital systems.
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Part Number | Manufacturer | Price | Quantity | Description |
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MT46H64M32L2CG-5 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 152VF... |
MT46H64M32L2CG-5 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 152VF... |
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MT46H8M16LFCF-75 IT | Micron Techn... | -- | 1000 | IC DRAM 128M PARALLEL 60V... |
MT46V64M16P-75:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
MT46V256M4TG-75:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
MT46V64M8TG-75E:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V64M16TG-6T IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
MT46H16M16LFBF-5:H | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H32M32LFB5-48 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46V32M4P-6T:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V32M16BN-75:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46H16M16LFBF-6 AT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H64M32LFCX-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
MT46H32M32LFB5-5 AT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46V64M8TG-75:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFCM-6 L IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H256M32L4JV-5 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 168VF... |
MT46V32M16TG-6T IT:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4FN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V16M16P-75:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H32M32LFB5-5 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46V32M16P-5B IT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFB5-6 AIT:C | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46V64M16P-6T:A | Micron Techn... | -- | 1000 | IC DRAM 1G PARALLEL 66TSO... |
MT46V64M8P-6T:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46V32M16P-5B IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V32M8P-5B L:M | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46V64M8TG-5B:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V8M16P-6TIT:DTR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46H16M32LFCM-6 L IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFB5-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
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