MT46V128M4P-6T:D TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT46V128M4
Supplier Device Package:	66-TSOP
Package / Case:	66-TSSOP (0.400", 10.16mm Width)
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	2.3 V ~ 2.7 V
Memory Interface:	Parallel
Access Time:	700ps
Series:	--
Clock Frequency:	167MHz
Memory Size:	512Mb (128M x 4)
Technology:	SDRAM - DDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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An Overview of the MT46V128M4P-6T:D TR Memory and its Applications

The MT46V128M4P-6T:D TR is a type of dual data rate (DDR) memory device made by Micron Technology, Inc and is defined by the JEDEC standard for industry-wide memory technology use. This device is primarily used in embedded systems, such as computer hardware and other electronics that require robust and reliable memory solutions. It is designed to provide high-bandwidth and low-power operation in order to meet space and power requirements of embedded solutions.

Physical Characteristics and Capabilities

The MT46V128M4P-6T:D TR is a registered two-bank double-data rate (DDR) SDRAM device. This device has a total capacity of 128MB and requires a VDD voltage of 2.5V. It operates at a speed of 133MHz and with a data rate of 266Mb/s. It is organized as four banks of 16Mx1 and 128Mx8. It has a maximum operating temperature of 95°C, a minimum operating temperature of 0°C, and a maximum startup time of 70ns.The device is available in a standard 144-ball ball-grid array (BGA) package, with each ball being 8um in diameter.

Functioning

The working principle of the MT46V128M4P-6T:D TR is based on the concept of double-data rate (DDR) operation. This principle allows data transfers to occur twice per single cycle by utilizing both the rising and falling edges of the clock signal. This helps to increase the system’s overall performance by allowing for higher data transfer rates than would be possible with a single data rate (SDR) device. The device supports write operations as well as read operations.The device has two separate, individually configurable medical interface ports. The first port is for DDR1 and the second port is for DDR2. Within each port, there are 16 independent data channels, each containing a bank of memory. This device also includes an integrated clock generator and phase-locked loop, which assists in the efficient running of the system.

Usag

The MT46V128M4P-6T:D TR is most commonly used in embedded systems applications. It has been used in handheld device applications, such as in portable video game consoles, electronic organizers, and smart phones, as well as in medical imaging and industrial control systems, among others.It is also sometimes used in digital signal processing (DSP) applications, such as for signal analysis. The device is designed to be able to process large amounts of data at high speeds, making it well-suited for DSP and other signal processing purposes.

Advantages

The MT46V128M4P-6T:D TR is an advanced memory device that offers many advantages over traditional single-bank or single-data rate (SDR) memory solutions. It is designed for high-speed, high-bandwidth operations, making it suitable for applications involving large amounts of data or high-bandwidth operations.The two-bank design of the device speeds up data access time by allowing read and write operations to occur at the same time. This in turn helps to reduce the power consumption of the system and improve overall system performance.Finally, the device has the ability to be integrated into a system with minimal delays, making it useful for embedded system applications. It is also easy to configure and use, so it is suitable for a wide range of applications.In conclusion, the MT46V128M4P-6T:D TR is an effective DDR SDRAM memory device that is well-suited for use in embedded systems. Its two-bank design, high bandwidth operation and low power consumption make it a popular choice for system designers looking for a reliable and cost-effective memory solution.

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