MT46V64M8FN-5B:D TR

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Memory

Memory or storage is a requirement for various applications, from gaming consoles and smartphones to high-performance computing. RAM is quality and cost-sensitive, which requires the development of memory devices that offer excellent performance. MT46V64M8FN-5B:D TR is an example of such a dynamic random-access memory (DRAM) device, offering low power consumption, high speed, and high capacitance in a small form factor.

MT46V64M8FN-5B:D TR is a 128 Meg x 8 bit SDRAM device with a package form of Ball Grid Array (BGA) FBGA. It is suitable for a variety of different system requirements and applications, including server, networking, and embedded systems. It provides a high level of control over the data flow through the memory, thereby ensuring a secure and reliable system.

MT46V64M8FN-5B:D TR organizes its memory cells in a 2-dimensional array that can be accessed directly, meaning that a single access operation can be completed in a single instruction period. It has a high-speed access time of 2.8 ns, two-bit data packing is available for each device, and a data burst mode with selectable access lengths can be used for asynchronous and synchrounous operations.

MT46V64M8FN-5B:D TR operates using a 3.3-Volt power supply. It has an operating temperature range of 0 to +85 degrees Celsius. It has a refresh time of 16μs (8K/64ms) and supports a wide range of standard cycles. Moreover, the device has a range of built-in functions, such as Auto-Refresh and Self Refresh, which reduce power consumption, and can provide a selection of operating modes.

In addition to its performance and reliability, MT46V64M8FN-5B:D TR offers cost-efficiency. Due to its low input voltage and low power consumption, users will be able to enjoy a lower-power system, which saves money in the long run. Furthermore, the device has a wide variety of features, making it an ideal memory solution for many different applications.

In summary, MT46V64M8FN-5B:D TR is an advanced DRAM device designed for optimal performance, reliability, and cost-efficiency. It is suitable for a variety of different system requirements and applications, offering low power consumption, high speed, and high capacitance in a small form factor. Furthermore, the device provides a range of built-in functions to increase reliability and reduce power consumption. Therefore, it is an ideal memory solution for many different applications.

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