| Allicdata Part #: | MT46V32M16CY-5BIT:JTR-ND |
| Manufacturer Part#: |
MT46V32M16CY-5B IT:J TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 60FBGA |
| More Detail: | SDRAM - DDR Memory IC 512Mb (32M x 16) Parallel 20... |
| DataSheet: | MT46V32M16CY-5B IT:J TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT46V32M16 |
| Supplier Device Package: | 60-FBGA (8x12.5) |
| Package / Case: | 60-TFBGA |
| Mounting Type: | Surface Mount |
| Operating Temperature: | -40°C ~ 85°C (TA) |
| Voltage - Supply: | 2.5 V ~ 2.7 V |
| Memory Interface: | Parallel |
| Access Time: | 700ps |
| Series: | -- |
| Clock Frequency: | 200MHz |
| Memory Size: | 512Mb (32M x 16) |
| Technology: | SDRAM - DDR |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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MT46V32M16CY-5B IT:J TR is a type of memory, specifically a double-data-rate synchronous dynamic random access memory (DDR SDRAM). It is a high-speed, low-power semiconductor device capable of storing data reliably, even at higher voltages than the standard memory devices.
DDR SDRAM operates at higher clock frequencies than other types of DRAM, providing faster bus performance and improved system-level performance. It allows memory designers to increase the speed of memory access while maintaining high reliability. DDR SDRAM uses a double data rate architecture to achieve faster data transfer rates. Its higher clock rate improves system throughput, providing better system-level performance than single data rate (SDR) SDRAMs.
MT46V32M16CY-5B IT:J TR memory is commonly used in a wide range of applications, including servers, desktop computers, laptops, tablets and other consumer electronics. It is used in a variety of memory applications, such as for gaming, media player, web access, and computer optimization. The device has a total of 6 logical surfaces that support multiple data signaling and can be used in a variety of memory configurations.
The MT46V32M16CY-5B IT:J TR has a capacity of 32 megabytes and a cycle time of 5 nanoseconds, making it suitable for applications where speed is a priority. The device incorporates a burst extended data output (EDO) mode, allowing the memory to respond faster to commands. It also has an asynchronous page mode, which allows address and data signals to be transferred between the processor and the memory in the same amount of time as a single operation.
The MT46V32M16CY-5B IT:J TR also features a low-power CMOS design, using a design that reduces power consumption. This allows for a higher level of performance without increasing the chip\'s power requirements. In addition, the MT46V32M16CY-5B IT:J TR incorporates a low-voltage signaling system, which increases the speed of data transmission between the processor and the memory.
The MT46V32M16CY-5B IT:J TR uses a four-transistor cell design, providing more memory cells per chip than other memory devices. This allows for greater data storage capacity, as well as faster data access. The device also features a redundant array of independent chips (RAIC) architecture, which allows the memory system to be more reliable and less susceptible to data errors.
In summary, the MT46V32M16CY-5B IT:J TR is a type of memory device used in a variety of applications. It is a commonly used dynamic random access memory (DRAM), providing improved system-level performance through faster clock rates and improved data access. The MT46V32M16CY-5B IT:J TRfeatures low-power CMOS design, a four-transistor cell design, and a redundant array of independent chips (RAIC) architecture, enabling greater storage capacity and improved reliability.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
| MT46V128M4BN-5B:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V64M8BN-6:F | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V128M4FN-75Z:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V128M4P-6T:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V32M4TG-75:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| MT46H32M16LFBF-6 AT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
| MT46H8M16LFBF-6 IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| MT46V32M16CY-5B IT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H128M16LFB7-6 WT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46V64M8FN-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H8M16LFCF-10 | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| MT46V128M8P-75:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46H32M32LFMA-6 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168WF... |
| MT46V16M16CY-5B AIT:M | Micron Techn... | -- | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M16P-75 L:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H128M32L2KQ-6 WT:B | Micron Techn... | -- | 1000 | IC DRAM 4G PARALLEL 168WF... |
| MT46V32M16FN-6 IT:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V64M16P-6T:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V128M4TG-75E:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H8M16LFBF-6 AT:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 60V... |
| MT46H64M32LFCM-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46V32M16TG-6T:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V32M16P-6T:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V32M16TG-6T:C | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V32M16P-5B:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8P-5B AIT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V32M16CV-5B:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V64M8FN-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V32M16TG-75 IT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H32M32LFCM-6 L IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
| MT46V16M16CY-6 IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H64M32LFCX-48 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46V32M16CY-5B AIT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H256M32L4LE-48 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 8G PARALLEL 168TF... |
| MT46V16M8P-6T IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
| MT46H32M32LFCM-6 L IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
| MT46H32M16LFBF-6 IT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
| MT46V32M16P-5B:J | Micron Techn... | 0.0 $ | 998 | IC DRAM 512M PARALLEL 66T... |
| MT46H1DAMA-DC | Micron Techn... | 0.0 $ | 1000 | IC MOBILE DDR 1G 32MX32 F... |
| MT46V32M8BG-6:GTR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
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MT46V32M16CY-5B IT:J TR Datasheet/PDF