| Allicdata Part #: | MT46H64M32LFBQ-48WT:CTR-ND |
| Manufacturer Part#: |
MT46H64M32LFBQ-48 WT:C TR |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 2G PARALLEL 90VFBGA |
| More Detail: | SDRAM - Mobile LPDDR Memory IC 2Gb (64M x 32) Para... |
| DataSheet: | MT46H64M32LFBQ-48 WT:C TR Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Series: | -- |
| Packaging: | Tape & Reel (TR) |
| Part Status: | Active |
| Memory Type: | Volatile |
| Memory Format: | DRAM |
| Technology: | SDRAM - Mobile LPDDR |
| Memory Size: | 2Gb (64M x 32) |
| Clock Frequency: | 208MHz |
| Write Cycle Time - Word, Page: | 14.4ns |
| Access Time: | 5.0ns |
| Memory Interface: | Parallel |
| Voltage - Supply: | 1.7 V ~ 1.95 V |
| Operating Temperature: | -25°C ~ 85°C (TA) |
| Mounting Type: | Surface Mount |
| Package / Case: | 90-VFBGA |
| Supplier Device Package: | 90-VFBGA (8x13) |
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Memory
A memory, in the context of computers and digital electronic devices, is a device or electronic component used to store data or instructions in a specific and organized form so that it’s easily available in the future. Memory is an integral part of almost all digital devices and is used to store information that can be accessed by the processor to execute specific tasks.
MT46H64M32LFBQ-48 WT:C TR is one example of a memory device. It is characterized by its 6.4 Gbit ( or 8 GByte) density, and its high-speed performance. It is designed to be used in applications with stringent space limitations, such as mobile and embedded systems. The device is available in 2.5V to 3.3 V operation and 0 ˚C to 70 ˚C temperature range.
Applications
MT46H64M32LFBQ-48 WT:C TR is a popular choice for applications where fast data processing is required, particularly in consumer electronics and industrial applications. It is particularly well-suited for applications where there are stringent space constraints. These include mobile and embedded devices like smartphones and tablets, GPS systems, industrial controllers, and automobiles. It is also used in industrial robotic and automation applications.
The combination of its high-speed performance and its small footprint makes it a viable choice for devices that require powerful performance to be packed within a small form factor. Additionally, the device is well-suited for applications with a high bandwidth requirement, such as video streaming, gaming and Virtual Reality.
Working Principle
MT46H64M32LFBQ-48 WT:C TR features a 64M x 32 design, meaning it is capable of storing 64 million bits of data in single device. It is specified to operate at clock rates up to 400 MHz, with its 32-bit wide data bus providing a maximum data transfer rate of 3.2 Gbps. The device also features an integrated level 2 ECC (Error-Correcting Code) system which provides improved reliability and robustness.
The memory is organized into 16,777,216 bytes. Each byte is composed of 8 bits and is assigned an address. These addresses are contained in a continuous range and can be accessed by the processor in an orderly fashion. The processor can access data of different types, such as 8-bit and 32-bit integer numbers, floating-point numbers and packed words.
Data is written to and read from the memory by the processor in a series of commands and operations. When the processor requests data in a location, the memory accesses the address and sends the requested data to the processor to be processed or used in the application. The processor can also write data to the memory. This is done by sending data from the processor to the memory, which is then stored in the specified location.
Conclusion
In conclusion, MT46H64M32LFBQ-48 WT:C TR is an example of a memory device. It is characterized by its 6.4 Gbit density, and its high-speed performance. It is designed to be used in applications with stringent space limitations, such as mobile and embedded systems. The device is well-suited for applications requiring fast data processing and it features an integrated level 2 ECC system which provides improved reliability and robustness.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
|---|
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| MT46V16M16BG-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M8P-5B IT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46H128M16LFDD-48 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFBQ-48 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46V256M4P-6T:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46H32M16LFBF-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
| MT46H32M32LFJG-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168VF... |
| MT46H64M32LFMA-5 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168WF... |
| MT46H128M32L2MC-5 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240WF... |
| MT46H8M32LFB5-75 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H16M32LFCM-5 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H16M32LFCX-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V16M16FG-6 L:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H8M32LFB5-6:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V128M8P-6T IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16P-6T IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8P-5B AIT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H128M16LFDD-48 IT:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFKQ-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168FB... |
| MT46V32M16FN-75 L:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H64M16LFCK-5 L IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
| MT46V64M4FG-75:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H16M32LFB5-5 IT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V64M8BN-6 L:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V256M4P-6T:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16BG-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M16TG-75 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H8M32LFB5-5 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H8M32LFB5-5:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V64M8P-5B:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8P-6T IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8FN-75 IT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16P-5B IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8TG-5B IT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
| MT46V16M16CY-5B AAT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
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MT46H64M32LFBQ-48 WT:C TR Datasheet/PDF