MT46H8M16LFCF-10 TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT46H8M16
Supplier Device Package:	60-VFBGA (8x10)
Package / Case:	60-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	0°C ~ 70°C (TA)
Voltage - Supply:	1.7 V ~ 1.9 V
Memory Interface:	Parallel
Access Time:	7.0ns
Series:	--
Clock Frequency:	104MHz
Memory Size:	128Mb (8M x 16)
Technology:	SDRAM - Mobile LPDDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Discontinued at Digi-Key
Packaging:	Tape & Reel (TR)

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Introduction

MT46H8M16LFCF-10 TR is a type of memory integrated circuit designed and produced by Micron Technology Inc., one of the world\'s leading manufacturers of digital memory products. This integrated circuit is capable of performing high-speed and reliable read-write operations. It can be used in a variety of applications, such as industrial automation, automotive and consumer electronics.

Application Field

MT46H8M16LFCF-10 TR is widely used in various types of fields, including industrial automation, automotive, consumer electronics, and many other applications. In industrial automation, MT46H8M16LFCF-10 TR can be used in data centers, server farms, robotics, and various automated manufacturing processes. In the automotive field, it can be implemented in vehicle infotainment systems and telematics. In consumer products, MT46H8M16LFCF-10 TR can be used in mobile devices, digital cameras, and other consumer electronics.

Features

The MT46H8M16LFCF-10 TR is designed with a number of features that make it a reliable and efficient integrated circuit. It has a high-speed read-write capability of up to 1066 MHz, an exceptional power efficiency of only 1.5V, and a low active power of just 4.5W. It also features a standard discrete Double Data Rate (DDR) interface and low-density parity-check (LDPC) error correction for reliable data storage and retrieval. The integrated circuit also offers a wide range of supported BL (Burst Length) settings from BL4 to BL 16, allowing for efficient read operations.

Advantages

MT46H8M16LFCF-10 TR offers a number of advantages that make it a good choice for a wide range of applications. Its high-speed read-write capability of up to 1066 MHz allows for the efficient transfer of data, while its exceptional power efficiency of only 1.5V and low active power of 4.5W make it a cost-effective option. Moreover, its wide range of supported BL settings from BL4 to BL 16 makes it a highly reliable integrated circuit, while its robust error correction allows for reliable data storage and retrieval.

Working Principle

MT46H8M16LFCF-10 TR operates on a synchronous dynamic random access memory (SDRAM) interface, allowing for high-speed read-write operations. The integrated circuit is composed of multiple memory cells, which store data in binary form. It also features a system of address and control lines, which are used to address each memory cell and control the writing, reading, and refreshing of the data stored in them.When a new piece of data is written to a memory cell, the address and control lines are activated, and the new data is stored. Similarly, when a certain memory cell is addressed, the control lines activate and the data stored in that cell is retrieved. Moreover, the integrated circuit also features a refresh system that constantly refreshes the data stored in the memory to ensure that they remain stable and accessible.

Conclusion

The MT46H8M16LFCF-10 TR is an integrated circuit designed and manufactured by Micron Technology Inc. It is a high-speed, reliable, and efficient memory chip suitable for a wide range of consumer electronics, automotive, and industrial automation applications. It features a fast read-write capability of up to 1066 MHz, an exceptionally low power consumption of 1.5V and 4.5W, and robust error correction mechanisms. Its synchronous dynamic random access memory (SDRAM) interface allows for efficient data storage and retrieval, while its wide range of supported BL settings from BL4 to BL 16 enhances its reliability and makes it suitable for different applications.

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