| Allicdata Part #: | MT46V128M4P-5B:J-ND |
| Manufacturer Part#: |
MT46V128M4P-5B:J |
| Price: | $ 0.00 |
| Product Category: | Integrated Circuits (ICs) |
| Manufacturer: | Micron Technology Inc. |
| Short Description: | IC DRAM 512M PARALLEL 66TSOP |
| More Detail: | SDRAM - DDR Memory IC 512Mb (128M x 4) Parallel 20... |
| DataSheet: | MT46V128M4P-5B:J Datasheet/PDF |
| Quantity: | 1000 |
| 1 +: | 0.00000 |
| Write Cycle Time - Word, Page: | 15ns |
| Base Part Number: | MT46V128M4 |
| Supplier Device Package: | 66-TSOP |
| Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 0°C ~ 70°C (TA) |
| Voltage - Supply: | 2.5 V ~ 2.7 V |
| Memory Interface: | Parallel |
| Access Time: | 700ps |
| Series: | -- |
| Clock Frequency: | 200MHz |
| Memory Size: | 512Mb (128M x 4) |
| Technology: | SDRAM - DDR |
| Memory Format: | DRAM |
| Memory Type: | Volatile |
| Part Status: | Obsolete |
| Packaging: | Tray |
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The Memory MT46V128M4P-5B:J is a type of synchronous dynamic RAM (SDRAM) that is used in various computer applications. It is a high-speed memory chip with a high storage density and is commonly used in embedded systems, high performance computing and networking applications. This memory chip contains 4 independent banks of 4 bits each, a total of 128 megabits of integrated storage capacity. It is capable of up to 400 MHz of memory access speed and is available in a wide range of configurations, features and clock speeds.
The MT46V128M4P-5B:J can be used in a wide variety of applications, including networking, multimedia, storage, embedded systems, automotive, medical and industrial automation. It is compatible with all major operating systems and hardware platforms, making it a versatile and cost-effective choice for many different applications. Some of the key features include low power consumption, integrated bus master arbitration and error correction code capabilities, an on-chip clock generator, low-power standby mode and support for a variety of physical interfaces.
The main advantage of the MT46V128M4P-5B:J is its ability to increase system performance by decreasing latency, improving data throughput and increasing memory bandwidth. It is also versatile, as it can be used in many different applications. The memory chip is also designed to deliver reliable performance, thanks to its advanced error correction, low power consumption and advanced clock control features.
The working principle of the MT46V128M4P-5B:J is based on synchronous dynamic random access memory (SDRAM). This type of memory utilizes a synchronous interface in order to process signals in a regular manner and transfers data at faster rates than conventional dynamic random access memory (DRAM). It also employs an internal clock to coordinate all operations.
The MT46V128M4P-5B:J utilizes row and column addressing, as well as bank organization, to retrieve data from memory. In order to increase memory bandwidth, the memory chip uses a self-timed data transfer technique, which is similar to that used in traditional DRAM and SRAM technologies. In this technology, data is transferred from memory in as few clock cycles as possible. This technology improves the overall performance of the memory chip by reducing latency and increasing data throughput.
The MT46V128M4P-5B:J also incorporates an on-chip clock oscillator to allow the device to operate at its optimal speeds. This helps reduce power consumption by avoiding unnecessary refreshes and reducing the number of active clock cycles. The device is also designed to correct any errors that may occur during data transmission and employ CRC (cyclic redundancy check) protection.
In short, the Memory MT46V128M4P-5B:J is a synchronous dynamic RAM (SDRAM) that can be used in a variety of applications. It is designed to deliver reliable performance, reduce latency and increase memory bandwidth. Its large storage capacity and wide range of configurations, features and clock speeds make it an ideal choice for embedded systems, high performance computing and networking applications. The device utilizes row and column addressing, as well as bank organization, to retrieve data from memory, with a self-timed data transfer method for increased data throughput.
The specific data is subject to PDF, and the above content is for reference
| Part Number | Manufacturer | Price | Quantity | Description |
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| MT46V16M16BG-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M8P-5B IT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46H128M16LFDD-48 WT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFBQ-48 AIT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 90VFB... |
| MT46V256M4P-6T:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46H32M16LFBF-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
| MT46H32M32LFJG-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 168VF... |
| MT46H64M32LFMA-5 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168WF... |
| MT46H128M32L2MC-5 WT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 4G PARALLEL 240WF... |
| MT46H8M32LFB5-75 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H16M32LFCM-5 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46H16M32LFCX-6:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V16M16FG-6 L:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H8M32LFB5-6:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V128M8P-6T IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16P-6T IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8P-5B AIT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H128M16LFDD-48 IT:C | Micron Techn... | -- | 1000 | IC DRAM 2G PARALLEL 60VFB... |
| MT46H64M32LFKQ-5 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 2G PARALLEL 168FB... |
| MT46V32M16FN-75 L:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H64M16LFCK-5 L IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
| MT46V64M4FG-75:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46H16M32LFB5-5 IT:C | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
| MT46V64M8BN-6 L:F | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V256M4P-6T:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 66TSO... |
| MT46V16M16BG-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
| MT46V32M16TG-75 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46H8M32LFB5-5 IT:H | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46H8M32LFB5-5:H TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
| MT46V64M8P-5B:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8P-6T IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V64M8FN-75 IT:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46V16M16P-5B IT:K TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8TG-5B IT:J | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
| MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
| MT46V64M8FN-75 L:D | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
| MT46H16M32LFCG-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 152... |
| MT46V16M16CY-5B AAT:M TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
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MT46V128M4P-5B:J Datasheet/PDF