MT46V32M8TG-6T:G TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Introduction to Memory MT46V32M8TG-6T:G TR

MT46V32M8TG-6T:G TR is a type of high-density, low-power Dynamic Random Access Memory (DRAM), commonly used in consumer electronics and mobile applications. It offers high-capacity, low-power storage and fast read/write access. MT46V32M8TG-6T:G TR is a type of asynchronous DRAM, meaning it does not require a dedicated clock for its operation and provides access to data at rates of up to 400MHz.

Application Field & Working Principle of MT46V32M8TG-6T:G TR

Due to its high-bandwidth, low-power, and high-capacity storage, MT46V32M8TG-6T:G TR DRAM is widely used in multi-media and gaming applications, as well as many common consumer electronic items such as smartphones, digital cameras, digital audio players, and MP3 players. The device is also a popular choice for automotive infotainment, medical imaging, and industrial controllers, as well as embedded systems such as tablets and notebooks.

MT46V32M8TG-6T:G TR DRAM works through a multi-bank memory system that works via four banks of 8192 rows and 256-bits of column. By utilizing the BEDO (Burst EDO) protocol, it can read four consecutive words, alternating between the four banks, in a single read cycle. This allows for multiple accesses of the memory during each access cycle, achieving faster data access and decreased power consumption.

The device also uses off-chip drivers, which are called ‘Write Terminated’ (WT) drivers. These drivers receive data from the memory controller and send it to the DRAM. The WT drivers take up a large portion of the operating power of the DRAM, accounting for roughly a third of its power use. The power savings provided by the WT drivers enables the DRAM to operate in a low-power mode, reducing overall energy usage.

MT46V32M8TG-6T:G TR DRAM also utilizes a proprietary pre-charging circuit called ‘Background Self Refresh’ (BSR). This ensures that the DRAM maintains its data even when the system is in a sleep mode. This is done by utilizing an algorithm that refreshes the cell contents based on the number of active cycles in a predetermined period of time. With BSR, the device can consume as low as 10% of its standby current.

The device also utilizes First-In-First-Out (FIFO) buffering. FIFO is a form of data storage that works by keeping track of the data that is stored and sends out data that is received in the same order in which it was stored. This method increases the speed of data transfer, as it eliminates the need to reset and initialize the device each time it is accessed, resulting in faster data access.

Overall, MT46V32M8TG-6T:G TR DRAM provides an excellent solution for a wide variety of applications due to its combination of high-capacity, low-power storage, and fast read/write access. With its BSR capability, FIFO buffering, and WT drivers, it offers an ideal combination of power savings and fast data access for a wide range of applications.

The specific data is subject to PDF, and the above content is for reference