MT46V32M8TG-6T IT:G TR Integrated Circuits (ICs) |
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Allicdata Part #: | 557-1028-2-ND |
Manufacturer Part#: |
MT46V32M8TG-6T IT:G TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 256M PARALLEL 66TSOP |
More Detail: | SDRAM - DDR Memory IC 256Mb (32M x 8) Parallel 167... |
DataSheet: | MT46V32M8TG-6T IT:G TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V32M8 |
Supplier Device Package: | 66-TSOP |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 700ps |
Series: | -- |
Clock Frequency: | 167MHz |
Memory Size: | 256Mb (32M x 8) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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MT46V32M8TG-6T IT:G TR memory is an Dual Voltage 2Gb x-32 Mobile SDRAM (Stacked Double Data Rate Synchronous Dynamic Random Access Memory) device. This device is capable of delivering low-power mobile memory solutions to next-generation wireless phones, digital still cameras, PDAs, and other mobile devices. It is built using a 0.13µm process technology, and is based on 1Gb or 2Gb stacked Memory-in-Package (MiP).
The MT46V32M8TG-6T IT:G TR provides the highest density of high-bandwidth DDR SDRAM to date, making it perfect for applications where size, cost, and power efficiency are of paramount importance. Its high density memory can store up to 8GB of data in a single DIMM and can deliver up to 6.4Gbps of peak bandwidth. This device also supports an industry-leading suite of low-power features including Partial Array Self-Refresh (PASR), Advanced Power Management (APM), and Deep Power-Down (DPD).
In addition to its low power features, the MT46V32M8TG-6T IT:G TR also offers a host of features that improve system performance, optimize data integrity, and enhance system reliability. These include advanced burst modes, read leveling feature, page size extensions, and global control features. The device also includes an on-chip temperature sensor that can be used to monitor the power consumption of the device and sound an alarm if the temperature exceeds the specified upper limit.
The main application field of MT46V32M8TG-6T IT:G TR are wireless phones, digital still cameras, PDAs and other mobile devices. It can also be used for computing and communications applications such as embedded systems, military systems, industrial PCs, medical equipment, and automotive systems. In addition, this device can be used for data storage applications such as hard drives, solid state drives, and flash memory.
The working principle of MT46V32M8TG-6T IT:G TR is based on its DDR SDRAM technology. It is composed of a core logic module, with data buses for address and data, as well as control signals. The device is a synchronous device that allows memory devices to share a common clock. The device works in two operating modes, burst and page mode, which are determined by the control signals it receives. In burst mode, data is read or written in larger chunks, which improves performance. In page mode, smaller blocks of data are read or written.
The MT46V32M8TG-6T IT:G TR is a high-performance, high-density memory with low power consumption. Its advanced features and low-power capabilities make it an ideal solution for a wide range of applications that require maximum performance and power efficiency. Furthermore, its read leveling feature ensures that data integrity is maintained, while its suite of low-power features ensures that the device meets the stringent requirements of next-generation mobile devices.
The specific data is subject to PDF, and the above content is for reference
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MT46H8M32LFB5-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46V32M16P-6T:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V64M8P-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V32M16BN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16BN-6:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
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