MT46V64M4FG-6:G TR Integrated Circuits (ICs) |
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Allicdata Part #: | 557-1032-2-ND |
Manufacturer Part#: |
MT46V64M4FG-6:G TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 256M PARALLEL 60FBGA |
More Detail: | SDRAM - DDR Memory IC 256Mb (64M x 4) Parallel 167... |
DataSheet: | MT46V64M4FG-6:G TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V64M4 |
Supplier Device Package: | 60-FBGA (8x14) |
Package / Case: | 60-FBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 700ps |
Series: | -- |
Clock Frequency: | 167MHz |
Memory Size: | 256Mb (64M x 4) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
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The MT46V64M4FG-6:G memory chip is specially designed to provide both cost and performance advantages to processors that require memory in the form of static random access memory. By utilizing miniaturized design and advanced manufacturing techniques, the MT46V64M4FG-6:G can be used in a variety of applications, from automotive to mobile phone handsets.
Application Fields:
The MT46V64M4FG-6:G SRAM is applicable in areas where high densities, low power consumption, small footprint and scalability characteristics are required. It can be used in applications such as embedded systems and real-time applications. It is also used in automotive, mobile phone, gaming and other high-speed applications.
For automotive applications, the MT46V64M4FG-6:G SRAM can be used as a direct memory access or as a memory enhancer. It has a scalability and flexibility that can easily meet the requirements of the industry. In the mobile phone industry, it is used to enhance the memory interface and reduce the power consumption of the device.
In addition, it can be used in gaming applications to improve the performance of the device. It can also be used as a cache in applications that require high performance. It is also suitable for use in applications that require large memory capacity and low power consumption.
Working Principle:
The MT46V64M4FG-6:G SRAM utilizes an innovative, advanced DRAM technology to provide a faster, more robust memory interface than traditional SRAM devices. The device has a memory architecture that is based on single port access and multiplier ports providing an unbeatable performance.
It employs a Single-ported RAM (SRAM) architecture which gives the device a high data rate and better capacitive loading. It includes an internal address decoder and multiplexer which enables the system to access multiple memory banks simultaneously. Additionally, the MT46V64M4FG-6 :G SRAM is designed to provide low latency and fast response times.
The MT46V64M4FG-6:G also employs a power-saving technique known as Voltage Domain Migration (VDM). This innovative technique optimizes the power consumption of the device by providing different operating voltages for each memory bank. This reduces the power consumption of the device while providing fast switching times and low latency performance.
Finally, the MT46V64M4FG-6:G has a wide range of applications in various embedded systems and real-time applications. It can be used in automotive, mobile phone, gaming and other high speed applications. With its scalability, flexibility and low-power features, the device is an ideal choice for any application that requires fast access to large amounts of memory.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MT46V16M8TG-6T L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V16M8TG-6T IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V128M4TG-6T:D TR | Micron Techn... | 9.85 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4TG-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4FN-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16TG-5B IT:JTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V16M16TG-5B:MTR | Alliance Mem... | -- | 2000 | IC DRAM 256M PARALLEL 66T... |
MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
MT46V128M4FN-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V64M8CV-5B IT:J | Alliance Mem... | 1.68 $ | 1729 | IC DRAM 512M PARALLEL 60F... |
MT46H32M16LFBF-5 IT:C | Micron Techn... | -- | 16971 | IC DRAM 512M PARALLEL 60V... |
MT46V8M16P-75:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V32M16P-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V16M16P-75:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H16M16LFBF-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H16M16LFBF-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H8M32LFB5-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46V32M16P-6T:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V64M8P-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V32M16BN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16BN-6:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16BN-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M8P-6T:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H16M16LFBF-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H16M32LFCM-6 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFCM-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H32M16LFCK-6 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
MT46H32M16LFCK-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
MT46H32M32LFCM-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46H32M32LFCM-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46H64M16LFCK-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
MT46H64M16LFCK-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
MT46V8M16P-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V16M16BG-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT46H16M32LFCM-5:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFCM-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
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