Allicdata Part #: | 557-1034-2-ND |
Manufacturer Part#: |
MT46V64M4TG-6T:G TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 256M PARALLEL 66TSOP |
More Detail: | SDRAM - DDR Memory IC 256Mb (64M x 4) Parallel 167... |
DataSheet: | MT46V64M4TG-6T:G TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V64M4 |
Supplier Device Package: | 66-TSOP |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 700ps |
Series: | -- |
Clock Frequency: | 167MHz |
Memory Size: | 256Mb (64M x 4) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a vital component of modern electronic systems, and MT46V64M4TG-6T:G TR is a top-of-the-line memory module widely used in embedded systems, consumer electronics, aerospace and defense, and other applications. The memory module is a reliable, cost-effective solution for increasing the capacity of systems. In this article, we will discuss the application field and working principle of MT46V64M4TG-6T:G TR.
The MT46V64M4TG-6T:G TR is a high-density memory module designed for high-speed read and write operations. It has a 1066 MHz data rate with a voltage of 1.35 volts, which makes it highly suitable for industrial and embedded applications with high data throughput and faster speeds. The memory module has a 64M x 8 bit organization with a total of 512M bits. It is ideal for applications requiring large capacity and high-speed performance. The chip is also extremely power-efficient, consuming only 70 mW of power when operating at 1066 MHz.
The MT46V64M4TG-6T:G TR is designed with a mixture of SDRAM, DDR3 and DDR4 technologies, with all three technologies working in tandem to deliver the desired performance level. The memory module also features advanced error correction and data integrity features that make it highly reliable. The common features and design of the memory module make it compatible with a range of processors, controllers, and other components.
MT46V64M4TG-6T:G TR memory is widely used in both embedded and industrial systems, such as in telecommunications, automotive, and aerospace and defense applications. The memory module is also commonly used in consumer electronic devices such as smartphones and personal computers, as it provides an excellent combination of performance and power efficiency. The memory module can also be used in medical devices, as it is reliable enough to store patient data and other important information.
The working principle of MT46V64M4TG-6T:G TR is based on its structure, which is composed of multiple memory cells. Each memory cell stores a single piece of data. To access the stored data, the memory module sends signals to the cells based on the address of the data required by the processor or other component. The signals cause the cells to open, allowing the stored data to be read or written. Depending on the type of memory, the signals may be electrical or optical.
The MT46V64M4TG-6T:G TR memory module is an advanced, reliable and power-efficient solution for increasing capacity in embedded and industrial systems. Its architecture combines SDRAM, DDR3 and DDR4 technologies to provide the best possible performance and power efficiency. The module is a very popular choice for many applications, due to its affordability and excellent performance. By understanding the application field and working principle of the memory module, we can better understand its capabilities and how it can benefit our systems.
The specific data is subject to PDF, and the above content is for reference
Part Number | Manufacturer | Price | Quantity | Description |
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MT46H64M16LFBF-5 IT:B | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
MT46V16M8TG-6T:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V32M4TG-6T:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V16M8TG-6T L:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V16M8TG-6T IT:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V128M4TG-6T:D TR | Micron Techn... | 9.85 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4TG-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V128M4FN-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16TG-5B IT:JTR | Alliance Mem... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V16M16TG-5B:MTR | Alliance Mem... | -- | 2000 | IC DRAM 256M PARALLEL 66T... |
MT46V16M16TG-5B IT:M | Alliance Mem... | 2.0 $ | 1333 | IC DRAM 256M PARALLEL 66T... |
MT46V128M4FN-6:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V64M8CV-5B IT:J | Alliance Mem... | 1.68 $ | 1729 | IC DRAM 512M PARALLEL 60F... |
MT46H32M16LFBF-5 IT:C | Micron Techn... | -- | 16971 | IC DRAM 512M PARALLEL 60V... |
MT46V8M16P-75:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V32M16P-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V16M16P-75:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H16M16LFBF-6 IT:A | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H16M16LFBF-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H8M32LFB5-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46H8M32LFB5-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT46V32M16P-6T:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V64M8P-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 66T... |
MT46V32M16BN-5B:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16BN-6:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M16BN-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60F... |
MT46V32M8P-6T:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 66T... |
MT46H16M16LFBF-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60V... |
MT46H16M32LFCM-6 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFCM-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H32M16LFCK-6 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
MT46H32M16LFCK-6 IT TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 60V... |
MT46H32M32LFCM-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46H32M32LFCM-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 90VFB... |
MT46H64M16LFCK-6 IT:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
MT46H64M16LFCK-6:A TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 1G PARALLEL 60VFB... |
MT46V8M16P-5B:D TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 66T... |
MT46V16M16BG-6 IT:F TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 60F... |
MT46H16M32LFCM-5:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
MT46H16M32LFCM-6 IT:B TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 90V... |
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