MT46V64M8P-5B:D TR

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

Memory is a vital component of many electronic systems, and choosing the right memory device for a particular application is essential for achieving performance and reliability. With this in mind, the MT46V64M8P-5B:D TR is an ideal choice for a variety of different applications, due to its unique combination of memory components, size, speed, and reliability.

The MT46V64M8P-5B:D TR is a 64 MB SDRAM module from Micron Technology, Inc. It is available in three different package types – SO-DIMM, TSOP-II, and TSOP-I – and can be used in either registered or unregistered configurations. The device is designed to function at bus speeds of up to 133 MHz and has a CL=3 latency (CAS 3), making it an ideal choice for a wide range of embedded applications that require high throughput and low latency.

The MT46V64M8P-5B:D TR has a burst length (BL) of 4 and can be operated in both single- and dual-channel configurations. It has an operating temperature range of 0°C to +85°C, a maximum supply voltage of 4.0V, and a data transfer rate of 1.6 GB/s. The device also features good thermal performance and ECC (Error Correcting Code) support.

In terms of its application field, the device is suitable for use in applications that require high data throughput, such as digital video, medical imaging, military, networking, and industrial automation. It can also be used in embedded systems that require high-density, high-throughput memory solutions.

The MT46V64M8P-5B:D TR utilizes a synchronous dynamic random access memory (SDRAM) architecture. This type of memory works by storing data in a number of different cells in the chips. These cells are connected to one another via a single clock source and two or three control signals. The clock source is used to provide the timing for memory operations, while the control signals are used to control the operation of the memory cells.

SDRAM provides much faster random access and data transfer times than other types of random access memory (RAM) because of its unique design. It achieves higher throughput rates by interleaving data and commands from multiple channels, allowing it to access and transfer data more quickly. This makes it ideal for applications that require high-bandwidth data transfers.

The MT46V64M8P-5B:D TR is also particularly beneficial in saving power, as it utilizes a low-power standby mode and advanced power management techniques. These techniques allow the device to modulate data flow, auto-refresh and even self-refresh, enabling the user to allocate more power where it is needed. This makes the device significantly more cost-effective, as well as more efficient.

The MT46V64M8P-5B:D TR is an excellent choice for a variety of applications due to its combination of size, speed, reliability, and power efficiency. Its advanced memory architecture allows for faster data access and transfer times, making it ideal for applications that require high throughput and low latency. This, coupled with its low-power operation and advanced power management capabilities, make it an ideal solution for a variety of embedded applications.

The specific data is subject to PDF, and the above content is for reference