MT46V8M16TG-6T:D TR Integrated Circuits (ICs) |
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Allicdata Part #: | 557-1043-2-ND |
Manufacturer Part#: |
MT46V8M16TG-6T:D TR |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 128M PARALLEL 66TSOP |
More Detail: | SDRAM - DDR Memory IC 128Mb (8M x 16) Parallel 167... |
DataSheet: | MT46V8M16TG-6T:D TR Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT46V8M16 |
Supplier Device Package: | 66-TSOP |
Package / Case: | 66-TSSOP (0.400", 10.16mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 2.3 V ~ 2.7 V |
Memory Interface: | Parallel |
Access Time: | 700ps |
Series: | -- |
Clock Frequency: | 167MHz |
Memory Size: | 128Mb (8M x 16) |
Technology: | SDRAM - DDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tape & Reel (TR) |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
Memory is a universal resource for data storage and information processing. Memory products are essential in many aspects of life and application. The MT46V8M16TG-6T:D is a type of dynamic random access memory (DRAM), and is widely used for its high performance, low power consumption and low cost.The MT46V8M16TG-6T:D TR is a type of DRAM module, consisting of a printed circuit board (PCB) populated with eight transistor-transistor logic (TTL). The memory module has a chip density of 4Gb, meaning it is capable of storing up to 4 gigabytes of data. The MT46V8M16TG-6T:D TR also has an operating voltage of 1.5V and a temperature range of 0-70 °C, making it suitable for use in a wide range of environments.The MT46V8M16TG-6T:D TR is mainly used in consumer applications. It is suitable for use in any application that requires fast data storage and retrieval, such as gaming consoles, digital cameras, and audio/video players. It is also ideal for use in embedded systems, where space and power consumption are restricted.The working principle of the MT46V8M16TG-6T:D TR is based on the DRAM interface, which consists of a controller and memory cells. The controller is responsible for controlling read and write access to the memory cells. The memory cells are composed of an array of transistors that store digital values. The memory cells are organized into a grid of rows and columns, with each cell having an individual address.When the MT46V8M16TG-6T:D TR receives a read or write command, the controller will first address the memory cells corresponding to the given address. Once the cells are addressed, the controller will then read or write data to the requested cells. Once the read or write operation is complete, the controller will return to a standby state.The MT46V8M16TG-6T:D TR memory module offers superior performance compared to other DRAMs. It is faster in responding to read and write requests due to its higher memory density, and its power consumption is lower than other DRAMs. Its wide power and temperature range makes it suitable for use in a wide range of applications.In conclusion, the MT46V8M16TG-6T:D TR is a type of dynamic random access memory module that is suitable for a wide range of consumer and embedded applications. Its superior performance and reliability make it the perfect choice for applications that require fast data storage and retrieval. Its wide power and temperature range makes it suitable for use in a wide range of environments. The memory module is also known for its lower power consumption and high performance, making it the perfect choice for anyone looking for a reliable and efficient memory resource.
The specific data is subject to PDF, and the above content is for reference
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