MT48H16M32L2B5-10 TR Allicdata Electronics
Allicdata Part #:

MT48H16M32L2B5-10TR-ND

Manufacturer Part#:

MT48H16M32L2B5-10 TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 90VFBGA
More Detail: SDRAM - Mobile LPSDR Memory IC 512Mb (16M x 32) Pa...
DataSheet: MT48H16M32L2B5-10 TR datasheetMT48H16M32L2B5-10 TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: --
Base Part Number: MT48H16M32
Supplier Device Package: 90-VFBGA (8x13)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 1.7 V ~ 1.9 V
Memory Interface: Parallel
Access Time: 7.5ns
Series: --
Clock Frequency: 100MHz
Memory Size: 512Mb (16M x 32)
Technology: SDRAM - Mobile LPSDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Discontinued at Digi-Key
Packaging: Tape & Reel (TR) 
Description

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Memory is here defined as the physical device used to store data or instruction in a computing system. It is also referred to as main memory, internal memory, primary storage, random access memory (RAM) or just plain memory. Memory is one of the most important components to any computer, as it is the primary store for all programs and data used by the CPU. One type of memory is the Static Random Access Memory (SRAM), which is used in the MT48H16M32L2B5-10TR.

The MT48H16M32L2B5-10TR is a 16 Megabit (2.048 MByte) SRAM device. It consists of 32 four-bit arrays on 16 chips, each comprised of a 512K x 8 array of self-timed SRAM cells. The device has been designed for applications used in personal computers, workstations and servers. It provides an increased cycle time and data access rate over traditional SRAM devices, with an access time of 10ns.

The operation of the MT48H16M32L2B5-10TR is based upon the read/write operations in a SRAM device. It utilizes a four-bit array structure that allows simultaneous access to the four-bit latch cells. The array structure allows for simultaneous read and write operations of the memory cells. Data is written to the memory cells by activating the write circuit which activates the charge pump. The charge pump transfers the charge of the source to the selected cells in the memory array. The data is then read back from the memory cells by activating the read circuit which activates the sense amplifier. The sense amplifier reads the voltage of the memory cell capacitors and retransfers the charge back to the source.

The MT48H16M32L2B5-10TR is ideal for use in applications where speed, power consumption and footprint are of utmost importance. It is ideal for high-speed processing in personal computers and workstations, as it provides access times of 10ns. Its small footprint size and low power consumption make it perfect for applications such as embedded or consumer applications, where power saving and space-saving are important factors. In addition, its high levels of data integrity make it perfect for mission critical applications.

In conclusion, the MT48H16M32L2B5-10TR is a perfect memory device for high-speed processing, embedded or consumer applications, or mission critical applications. Its four-bit array structure and simultaneous read/write operations allow for efficient and reliable data storage and retrieval. Its small size and low power consumption make it ideal for applications where power saving and space-saving are important factors. The device’s fast access times and data integrity also make it perfect for any application that requires both speed and reliability.

The specific data is subject to PDF, and the above content is for reference

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