MT48V8M16LFB4-8 IT:G TR

Write Cycle Time - Word, Page:	15ns
Base Part Number:	MT48V8M16
Supplier Device Package:	54-VFBGA (8x8)
Package / Case:	54-VFBGA
Mounting Type:	Surface Mount
Operating Temperature:	-40°C ~ 85°C (TA)
Voltage - Supply:	2.3 V ~ 2.7 V
Memory Interface:	Parallel
Access Time:	7ns
Series:	--
Clock Frequency:	125MHz
Memory Size:	128Mb (8M x 16)
Technology:	SDRAM - Mobile LPSDR
Memory Format:	DRAM
Memory Type:	Volatile
Part Status:	Obsolete
Packaging:	Tape & Reel (TR)

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Introduction to MT48V8M16LFB4-8 IT:G TR

The MT48V8M16LFB4-8 IT:G TR is a dynamic random access memory (DRAM) with 8 megabytes of storage capacity. It is a 4-bit wide device, meaning that data is written and retrieved four bits at a time. It is manufactured in a tiny ball grid array (BGA) package, making it ideal for applications requiring a small form factor. This type of device is commonly used in both commercial and industrial applications.

Application field

The MT48V8M16LFB4-8 IT:G TR is designed for use in computationally intensive applications that require large amounts of RAM. It is used in a variety of electronic systems, from laptops to servers to embedded medical devices. It is often used in embedded systems, due to its small size, low power draw, and high speed. It is also used in air traffic control systems, industrial controllers, and scientific applications.

Advantages of MT48V8M16LFB4-8

The MT48V8M16LFB4-8 IT:G TR offers several advantages over other types of DRAM. It offers high speed and low power draw, thanks to its small BGA package and its low voltage operation. It is also resistant to shock and vibration, making it more reliable than other DRAM devices. Furthermore, its BGA mounting gives it the ability to withstand extreme temperatures, making it suitable for use in industrial and military environments.

Working principle

DRAMs are composed of capacitors and transistors. The capacitors store the charge, while the transistors control the reading and writing of data. In the MT48V8M16LFB4-8 IT:G TR device, the transistors are arranged in an array of 8-megabyte row and column addresses. When data is to be written, the transistors transfer the charge from the row address to the column address. When data is to be read, the transistors transfer the charge from the column address to the row address.The MT48V8M16LFB4-8 IT:G TR device operates at a clock speed of 400MHz, allowing it to access data in 8 nanoseconds. It is also capable of error-correcting codes (ECC), ensuring that data is not corrupted or lost during transfers. Furthermore, the device is resistant to disturbances such as noise and EMI, reducing the chances of errors during operation.

Conclusion

The MT48V8M16LFB4-8 IT:G TR is a small, low-power DRAM with 8 megabytes of storage capacity. It is widely used in a variety of commercial, industrial, and military applications. It offers high speed, low power draw, and resistance to shock and vibration. Furthermore, it is capable of error-correcting codes and resistant to noise and EMI. The MT48V8M16LFB4-8 IT:G TR is a reliable, versatile, and cost-effective memory for computationally intensive applications.

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