MT48LC32M8A2TG-75:D TR

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The MT48LC32M8A2TG-75:D TR is a type of memory, specifically a dynamic random access memory (DRAM) module. It is a double-data-rate (DDR) synchronous dynamic random access memory (SDRAM) integrated circuit. It is designed for high-speed applications and has a transfer rate of up to 800Mbps. It is also used in laptops and desktops for general purpose systems.The DRAM technology was developed in the 1960s and has greatly advanced over the years. DRAM is used to store large amounts of data in a small form factor. It uses transistors and capacitors to store data in a matrix form. As the technology has progressed, so has the ability to increase the speed, density and cost effectiveness of the memory.The MT48LC32M8A2TG-75:D TR memory module is an example of a high-speed, high-density DRAM. The module has a total storage capacity of 32MB and is organized as 256Mbit x 128. The module is programmed in five clock cycles and features low latency, a CAS latency of 2, and a pre-charge time of 3 clock cycles.The module uses a double-data-rate architecture, which allows for efficient data transfer with less power consumption. It has double-data-rate synchronization with a clock and data recovery feature. This allows for faster memory access and improved throughput.The module also has a hardware-assisted power and thermal management feature that helps reduce power draw and thermally optimized transistors. The module also has a 2.5V±10% tolerance voltage and is a SATA 1.5 V compatible device.The working principle of the MT48LC32M8A2TG-75:D TR is based on DRAM technology. DRAM works by maintaining a charge on a component called a capacitor, which stores information and then needs to be periodically refreshed. As data is written to and read from the memory module, the refresh operation is triggered to maintain the charge on the capacitors.The MT48LC32M8A2TG-75:D TR module is designed for high-speed applications, such as gaming, graphic design, and video processing. The high speed, low latency and pre-charge time provide a faster response time and improved throughput. The device also provides efficient data transfer, power and thermal management, as well as is compatible with multiple voltage levels. This makes it an ideal memory module for many applications.

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