MT48LC8M16A2P-7E AIT:L TR Datasheet/PDFMemory is a key component in many electronics applications. Memory technology has moved from single-cell static to high-density static and dynamic random access memory (DRAM) over the past decades. The MT48LC8M16A2P-7E AIT:L TR is an example of a high-density static random access memory (SRAM) solution. It is an 8-megabyte module with a 2-bit page mode that allows for faster data transfers than standard SRAM modules.
MT48LC8M16A2P-7E AIT:L TR Features
The MT48LC8M16A2P-7E AIT:L TR is a low-power, high-speed static random access memory (SRAM) module with a 2-bit page mode. It is used in applications that require high-speed data access. It has a maximum frequency of 100MHz and a cycle time of 10ns, making it well suited for applications needing fast access to data.
The module contains 8-megabytes of storage and is divided into 16 segments of 512K bytes each. This allows for segmented access, which makes the memory module more flexible for applications requiring different types of access patterns. The module also supports multiplexed address and data bus interfaces and is self-refreshing, eliminating the need for additional memory refresh circuits.
MT48LC8M16A2P-7E AIT:L TR Applications
The MT48LC8M16A2P-7E AIT:L TR is an ideal memory solution for applications such as image processing, signal processing, and control systems. It is well-suited for applications requiring high-speed access to data, such as video camcorders and digital signal processors. It is also particularly well-suited for use in embedded systems, embedded video applications, and system-on-chip (SOC) designs.
MT48LC8M16A2P-7E AIT:L TR Working Principle
The MT48LC8M16A2P-7E AIT:L TR uses static random access memory (SRAM) cells to store data. SRAM is a type of memory that uses electronic transistors to store data, unlike dynamic random access memory (DRAM), which stores data in capacitors. SRAM memory is faster than DRAM memory but is more expensive.
Each SRAM cell in the MT48LC8M16A2P-7E AIT:L TR contains two transistors and six capacitors. The capacitors store a charge which is used to store one bit of data, while the two transistors control the flow of electricity to the capacitors. The transistors are used to modify the charge on the capacitors and thus modify the data stored in the SRAM cells.
The MT48LC8M16A2P-7E AIT:L TR contains 16 segments of 512K bytes each. This segmentation allows for faster access to specific data, as the time to access a particular piece of data is reduced. The module also supports multiplexed address and data bus interfaces, allowing for further speed optimization in applications that require it.
Conclusion
The MT48LC8M16A2P-7E AIT:L TR is an 8-megabyte module with a 2-bit page mode that allows for faster data transfers than standard SRAM modules. It is ideal for applications requiring high-speed access to data, such as image processing, signal processing, and control systems. The module supports fast segmented access and multiplexed address and data bus interfaces. It also uses static random access memory (SRAM) cells to store data, eliminating the need for additional memory refresh circuits.