MT48H16M32LFCM-6 L IT:B TR Allicdata Electronics
Allicdata Part #:

MT48H16M32LFCM-6LIT:BTR-ND

Manufacturer Part#:

MT48H16M32LFCM-6 L IT:B TR

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 512M PARALLEL 90VFBGA
More Detail: SDRAM - Mobile LPSDR Memory IC 512Mb (16M x 32) Pa...
DataSheet: MT48H16M32LFCM-6 L IT:B TR datasheetMT48H16M32LFCM-6 L IT:B TR Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT48H16M32
Supplier Device Package: 90-VFBGA (10x13)
Package / Case: 90-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7 V ~ 1.95 V
Memory Interface: Parallel
Access Time: 5ns
Series: --
Clock Frequency: 166MHz
Memory Size: 512Mb (16M x 32)
Technology: SDRAM - Mobile LPSDR
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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MT48H16M32LFCM-6 L IT:B TR is a 4M x 16 bit x 4 Banks SDRAM that is widely used in memory applications. It has been designed to provide fast and reliable data retention and access. The modules are organized as four independent 16 Mbit banks x 4 bit organization that can operate with a single clock. The device offers one of the highest data rate for an SDRAM module with a maximum clock frequency of 110MHz and an access time of 10ns.

The MT48H16M32LFCM-6 L IT:B TR is suitable for all general-purpose computing and storage applications that require a large amount of memory. It is used for the memory storage in digital systems such as desktops, servers, and embedded systems. The memory device has been designed to optimize power efficiency by operating at a lower voltage and consuming less current. Additionally, the device has advanced features, such as an internal power-DOWN mode and a self-refresh function that allows the device to enter a low-power state while still retaining data.

The MT48H16M32LFCM-6 L IT:B TR works based on the synchronous dynamic random access memory (SDRAM) technology. The device consists of an input/output, a clock and a control interface connected to the DRAM array. The DRAM array consists of four banks, each of which is two-dimensional. The device is capable of storing 16-bit data in each of the banks and can provide random read and write access to the memory cells. The device contains an on-chip clock generator which uses a fixed frequency to control the cycle times of all operations. Data is transferred to and from the device on the rising edge of the clock.

The MT48H16M32LFCM-6 L IT:B TR features an array of features to simplify system design. The device supports a burst length of four and can access data in a single cycle. It allows read and write operations to continue without intervention from the system unless a refresh command is necessary. Additionally, the device supports auto precharge and auto power down modes to minimize power consumption. The device also includes an error correction code (ECC) to protect stored data from single bit accuracy errors and system has a temperature-compensated on-chip voltage regulator and clock generator circuit for low power, high speed operation.

The MT48H16M32LFCM-6 L IT:B TR provides a cost-effective, high-performance memory solution for a variety of storage and computing applications. The device has a low power design, with a maximum operating current at 125mA and a standby current of less than 25mA. The device utilizes a simple pin interface which requires minimal external components, allowing for simplified system design. The MT48H16M32LFCM-6 L IT:B TR is widely used in embedded systems, consumer electronics, peripherals, and networking applications.

The specific data is subject to PDF, and the above content is for reference

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