Allicdata Part #: | 557-1596-ND |
Manufacturer Part#: |
MT48H32M16LFB4-75 IT:C |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 512M PARALLEL 54VFBGA |
More Detail: | SDRAM - Mobile LPSDR Memory IC 512Mb (32M x 16) Pa... |
DataSheet: | MT48H32M16LFB4-75 IT:C Datasheet/PDF |
Quantity: | 1000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT48H32M16 |
Supplier Device Package: | 54-VFBGA (8x8) |
Package / Case: | 54-VFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | -40°C ~ 85°C (TA) |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Memory Interface: | Parallel |
Access Time: | 5.4ns |
Series: | -- |
Clock Frequency: | 133MHz |
Memory Size: | 512Mb (32M x 16) |
Technology: | SDRAM - Mobile LPSDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT48H32M16LFB4-75 IT:C is a 64 megabit double data rate (DDR) synchronous Dynamic Random Access Memory (SDRAM). It has an operating frequency of up to 266MHz, a density of 8Gb, and operates in a temperature range up to 125°C. It supports a fully-buffered upgrade of the DDR3 SDRAM. It is a type of non-volatile memory (NVM) that can store and recall data, used in digital systems such as computers, video game consoles and other electronic devices.
Application Field
The MT48H32M16LFB4-75 IT:C is used for high-volume, high-performance applications such as edge computing and AI inference in mobile phones and tablets. It\'s also used in supercomputing applications for machine learning and deep learning. It can be used for big data analytics and analysis, as well as for larger storage needs such as cloud computing applications.
Working Principle
The MT48H32M16LFB4-75 IT:C is a mixed technology memory device that uses a mix of typologies to store data. It uses a 4-bit cell-level memory array with both DRAM and SRAM cell technologies. DRAM cell technology stores data in the form of electrons on capacitors, while SRAM cell technology stores data in the form of bits on a SRAM chip. This mix allows the memory device to transfer more data at higher speeds which makes it more efficient.
The device uses multiple channels of data to achieve an effective data rate of up to 266MHz. It communicates with a host control such as microprocessors to control the flow of data between the device and the system. Data is written at the speed of the host, and then read at the device\'s maximum frequency. The MT48H32M16LFB4-75 IT:C uses a DDR interface which allows for high speed transfer with low power consumption.
The device also uses error detection and correction algorithms to ensure data accuracy. The data is stored in the on-chip registers and is written or read by activating or deactivating the appropriate transistors. The data is then passed through a serial input/output (SIO) interface which allows the device to interact with the rest of the system.
The MT48H32M16LFB4-75 IT:C is an excellent choice for applications that require high performance and low power consumption. It is ideal for applications such as edge computing, AI inference in mobile phones and tablets, and supercomputing applications such as machine learning and deep learning.
The specific data is subject to PDF, and the above content is for reference
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