MT48H4M16LFB4-75 IT:H TR

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Memory is an important component of computing and is an indispensable element of computing architecture. The performance of a computer and its functionality can be significantly affected depending on the choice of memory. MT48H4M16LFB4-75 IT:H TR is an optional selection of today’s computer memory. This article will focus on the application field and working principle of MT48H4M16LFB4-75 IT:H TR.

Application Field

MT48H4M16LFB4-75 IT:H TR is a double data rate type four synchronous dynamic random-access memory (SDRAM). It is widely used in digital electronics, such as notebook computers, digital cameras, game consoles, servers, and set-top boxes. This DRAM has a 512-Mbit capacity and can operate at a maximum bus speed of 667 MHz. It also has an 8-bit internal feedback register for burst management and dynamic memory refresh of all data.

The MT48H4M16LFB4-75 IT:H TR is available in different form factors, including TSOP-II and FBGA. It is also used in the industrial field due to its high reliability. It is suitable for operating at temperature ranges between ­-10°C and +85°C.

Working Principle

MT48H4M16LFB4-75 IT:H TR use a synchronous dynamic random-access memory (SDRAM) that consists of dynamic random-access memory (DRAM) cells arranged in a rectilinear array. It uses the DRAM cells to store data. Data is written to and read from the DRAM cells using transistors. Each DRAM cell contains one transistor, which is used to switch the bit on and off to change the state of the cell.

SDRAM also uses an addressing scheme. The memory cells are arranged in columns and rows, and each row contains 8-bits of memory. This arrangement allows for faster read and write operations. Each row and column is identified by an address, which is used to access or write data to a specific location in memory.

The MT48H4M16LFB4-75 IT:H TR also uses a feedback register to ensure an orderly refresh of all data stored in the SDRAM cells. The feedback register ensures that all 8-bits of data stored in each DRAM cell can be read in a burst mode and refreshed in an orderly manner. This ensures that fresh data is always available for the system to use without having to constantly refresh the memory.

Conclusion

MT48H4M16LFB4-75 IT:H TR is a reliable DRAM that has a wide range of applications. It is primarily used in consumer electronics and industrial applications, and it has the capacity to operate at temperatures as low as -10°C and as high as +85°C. This DRAM has an 8-bit internal feedback register that enables it to read data in a burst mode and refresh all data stored in the DRAM cells in an orderly manner.

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