Allicdata Part #: | MT48H8M32LFF5-10-ND |
Manufacturer Part#: |
MT48H8M32LFF5-10 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 256M PARALLEL 90VFBGA |
More Detail: | SDRAM - Mobile LPSDR Memory IC 256Mb (8M x 32) Par... |
DataSheet: | MT48H8M32LFF5-10 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Write Cycle Time - Word, Page: | 15ns |
Base Part Number: | MT48H8M32 |
Supplier Device Package: | 90-VFBGA (8x13) |
Package / Case: | 90-VFBGA |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 1.7 V ~ 1.95 V |
Memory Interface: | Parallel |
Access Time: | 7ns |
Series: | -- |
Clock Frequency: | 100MHz |
Memory Size: | 256Mb (8M x 32) |
Technology: | SDRAM - Mobile LPSDR |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Discontinued at Digi-Key |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
The MT48H8M32LFF5-10 is a type of dynamic random access memory (DRAM), which consists of two-dimensional arrays of bit cells and associated circuit elements for performing read and write operations. It is mainly used for certain applications such as embedded systems, industrial automation systems, medical devices, and so forth. The technology used in this memory module is a state of the art low-voltage technology, which helps conserve energy and significantly reduce power consumption.
The DRAM memory module consists of a silicon chip, magnetic materials, and other integrated circuits, etc. The chip\'s basic architecture includes the processor, external access buses, a memory array and associated logic, and various memory banks. The external access buses are what allow the processor to access the memory array and logic cells as well as the memory banks. The magnetic materials act like a form of non-volatile storage, allowing the processor to store information safely and securely.
The working principle of the MT48H8M32LFF5-10 is based on two basic functions: the refresh cycle and the write cycle. The refresh cycle loads new data into the chip each time it is powered on. The loaded data is then processed and stored in the memory array. The write cycle is used to store new data into the memory array and overwrite previous data. The data is written using a column address strobe (CAS) signal which triggers the write cycle. The data can be retrieved from the memory array using the same CAS signal.
In addition to these basic functions, the MT48H8M32LFF5-10 also supports various advanced features including error correcting code (ECC) for data protection, read and burst modes for faster data access, data prefetch for improved performance, and so forth. The device also features on-chip temperature sensors for thermal management and protection against overheating. It also supports self-refreshing capability for intelligent power saving.
All in all, the MT48H8M32LFF5-10 is an ideal memory module for use in embedded systems, industrial automation, medical devices, and other applications looking for reliable and cost-effective solutions. It offers a high level of performance, flexibility, and power efficiency for an affordable price. Furthermore, it is backed by increased levels of reliability, meaning that users can trust the product to store their data securely.
The specific data is subject to PDF, and the above content is for reference
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