MT48LC16M16A2BG-75:D Allicdata Electronics
Allicdata Part #:

MT48LC16M16A2BG-75:D-ND

Manufacturer Part#:

MT48LC16M16A2BG-75:D

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 256M PARALLEL 54VFBGA
More Detail: SDRAM Memory IC 256Mb (16M x 16) Parallel 133MHz 5...
DataSheet: MT48LC16M16A2BG-75:D datasheetMT48LC16M16A2BG-75:D Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Write Cycle Time - Word, Page: 15ns
Base Part Number: MT48LC16M16A2
Supplier Device Package: 54-VFBGA (8x14)
Package / Case: 54-VFBGA
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 5.4ns
Series: --
Clock Frequency: 133MHz
Memory Size: 256Mb (16M x 16)
Technology: SDRAM
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory: MT48LC16M16A2BG-75:D Application Field and Working Principle

Memory is an integral part of any electronic system, used to store data and instructions in an efficient way. Memory comes in different forms such as ROM (Read-Only Memory), RAM (Random Access Memory), Flash Memory, and many other variants. In this article, we will focus on the MT48LC16M16A2BG-75:D, a type of DRAM (Dynamic Random Access Memory) that has become popular in recent times due to its high performance.

The MT48LC16M16A2BG-75:D is a type of DRAM (Dynamic Random Access Memory) with a 16Mbit capacity. It is organized as 16M x 16 with a 1M x 16 organization and is 7.5T-CK rated. The block diagram of the memory chip is shown in Figure 1. The chip includes 16M x 16 internal array, 8K x 16 cache array, EEPROM, serial peripheral interface, and write protection register.

Figure 1: The block diagram of the MT48LC16M16A2BG-75:D

The MT48LC16M16A2BG-75:D is used by engineers to enhance the speed and performance of applications, due to its higher capacity. The device can operate over a wide voltage range and is suitable for use in low-power applications. Also, the chip has a fast write-cycle time, which helps the system to perform operations faster. It also supports fast read operations and optimized refresh cycles, resulting in higher performance.

The working principle of the MT48LC16M16A2BG-75:D is based on the same principle as that of any other memory device. The chip consists of an array of memory cells, which are arranged in rows and columns. Each of these memory cells are able to store information in the form of 0s and 1s. When a row of cells is selected, information can be read from them. The chip can also perform write operations, wherein data can be stored in the memory cells. Additionally, the chip is designed to detect any read or write errors and to alert the system if any occur.

The application field of the MT48LC16M16A2BG-75:D has been rapidly growing in recent times due to the performance benefits it offers. It is used in a wide range of consumer, industrial and automotive applications. The device can be used for storing large amounts of data, such as documents and images. It is also used as an alternate storage medium for faster booting of systems. Additionally, the chip is often used in embedded systems, such as TVs and music players, due to its low power consumption. The chip is also popular for its use in networking and computer memory applications.

In conclusion, the MT48LC16M16A2BG-75:D is a type of DRAM (Dynamic Random Access Memory) that has a high capacity and is ideal for use in low-power applications. The chip operates on the same principle as any other memory device, with an array of memory cells that can store information in the form of 0s and 1s. The application field of the chip is vast and is growing rapidly due to the performance benefits it offers.

The specific data is subject to PDF, and the above content is for reference

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