MT48LC2M32B2P-7:G Allicdata Electronics
Allicdata Part #:

MT48LC2M32B2P-7:G-ND

Manufacturer Part#:

MT48LC2M32B2P-7:G

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Micron Technology Inc.
Short Description: IC DRAM 64M PARALLEL 86TSOP II
More Detail: SDRAM Memory IC 64Mb (2M x 32) Parallel 143MHz 5.5...
DataSheet: MT48LC2M32B2P-7:G datasheetMT48LC2M32B2P-7:G Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Write Cycle Time - Word, Page: 14ns
Base Part Number: MT48LC2M32B2
Supplier Device Package: 86-TSOP II
Package / Case: 86-TFSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Operating Temperature: 0°C ~ 70°C (TA)
Voltage - Supply: 3 V ~ 3.6 V
Memory Interface: Parallel
Access Time: 5.5ns
Series: --
Clock Frequency: 143MHz
Memory Size: 64Mb (2M x 32)
Technology: SDRAM
Memory Format: DRAM
Memory Type: Volatile
Part Status: Obsolete
Packaging: Tray 
Description

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Memory is a kind of information storage device in the computer system, which plays an important role in the operation of computer. The MT48LC2M32B2P-7:G memory is a single-power supply synchronous dynamic memory device. Its main purpose is to provide high speed and low power operation. In this article, we discuss the application field of this MT48LC2M32B2P-7:G memory and its working principle.

Application field

MT48LC2M32B2P-7:G memory is a high-speed, low-power synchronous dynamic random access memory (SDRAM). It is a suitable solution for timing access, storage and memory applications that require the use of mobile or portable embedded products. It is usually used in personal computer (PC), industrial computer, server, router, wireless system, storage system and industrial control equipment. It is especially suitable for purposes requiring low power and high speed, such as networking and graphics, image capture, video capture, audio recording and video conferencing. All these operations are driven by this MT48LC2M32B2P-7:G memory.

Working Principle

MT48LC2M32B2P-7:G memory is based on SDRAM technology. It has a fast clock to drive the internal row and column access operations. A typical storage system uses an array of words and bits to store data. The MT48LC2M32B2P-7:G memory uses a Matrix of cells to store multiple bytes of data. Each data cell contains 8 bits of data and utilises a 1-bit error-detection scheme for data integrity. When a specified address is issued to the memory, the rows and columns are decoded in order to access the data stored in the matrix.

The MT48LC2M32B2P-7:G memory is constructed from two independent memory arrays: the left bank and the right bank. Using the two banks allows for two simultaneous read or write operations, providing increased throughput and data transfer rate. This efficient design facilitates parallel data transfers for fast and reliable data manipulation. Additionally, the MT48LC2M32B2P-7:G memory can access multiple rows and column addresses simultaneously, which reduces the access time and enhances the overall performance.

The MT48LC2M32B2P-7:G memory has been designed to have a low standby current when in idle state and it features an ultra-low power operation when using the self-refresh mode. This allows for a high amount of memory to be maintained with minimal power use. Also, the MT48LC2M32B2P-7:G memory has a low package height and a high pin count. This increases the data bandwidth while keeping a small form factor, allowing for a very compact design.

Conclusion

MT48LC2M32B2P-7:G memory is an efficient and reliable synchronous dynamic random access memory device, used widely in a variety of applications. It is characterised by low power consumption and high data transfer rate, and the two-bank architecture provides an enhanced performance. This memory is suitable for use in portable and embedded systems, providing fast access and reliable memory storage.

The specific data is subject to PDF, and the above content is for reference

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