
Allicdata Part #: | MT48LC4M16A2P-7E:G-ND |
Manufacturer Part#: |
MT48LC4M16A2P-7E:G |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Micron Technology Inc. |
Short Description: | IC DRAM 64M PARALLEL 54TSOP |
More Detail: | SDRAM Memory IC 64Mb (4M x 16) Parallel 133MHz 5.4... |
DataSheet: | ![]() |
Quantity: | 1000 |
Write Cycle Time - Word, Page: | 14ns |
Base Part Number: | MT48LC4M16A2 |
Supplier Device Package: | 54-TSOP II |
Package / Case: | 54-TSOP (0.400", 10.16mm Width) |
Mounting Type: | Surface Mount |
Operating Temperature: | 0°C ~ 70°C (TA) |
Voltage - Supply: | 3 V ~ 3.6 V |
Memory Interface: | Parallel |
Access Time: | 5.4ns |
Series: | -- |
Clock Frequency: | 133MHz |
Memory Size: | 64Mb (4M x 16) |
Technology: | SDRAM |
Memory Format: | DRAM |
Memory Type: | Volatile |
Part Status: | Obsolete |
Packaging: | Tray |
Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us: sales@allicdata.com
MT48LC4M16A2P-7E:G is a 4 Megabit (512 K x 8 bit) Dynamic Random Access Memory (DRAM). MT48LC4M16A2P-7E:G has an optimal operating temperature range of 0°C to 70°C(TA) . The dynamic random access memory (DRAM) is a synchronous device which consists of a bank of memory cells, sense amplifiers and divided into two parts: a row decoder and a column decoder. The two sections of the decoder together define and select a single cell in which the data is stored.
The row decoder consists of the word line drivers and the word line decoders, which decode the address input and select the row of memory cells. The word line drivers are transistors that are connected to the word line and act as low impedance pathways between memory cells and the row decoders. The word line decoders select the row of cells based on the address input, and the column decoder selects the correct bit of information from the selected row.
When the memory chip receives an address, it will select the appropriate column or row, depending on the address received. This process is known as addressing. When the row has been selected, the data can be read or written to it. When writing data to a cell, the data is stored in a small capacitor and the stored data is then referenced as logic bits, either a "1" or "0". When the memory chip reads data from a cell, the stored data is compared to the data stored in the memory array.
The MT48LC4M16A2P-7E:G is a high speed DRAM chip which offers fast access times of 5ns and an impressive clock frequency of 100MHz. This makes it suitable for a wide range of applications. It is also very power efficient, making it ideal for use in portable devices, and its low-power requirements make it an ideal choice for battery-operated applications such as MP3 players and cell phones.
The Memory chip is mostly used in applications where there is large volume of data exchange taking place such as web servers, computer networks, video streaming, etc. It is also extensively used in gaming devices, video cards, and video applications that demand the highest performance. In addition, the memory chip is used in industrial control systems, robotics, and embedded systems, where fast processor speed and accurate data representation is required.
MT48LC4M16A2P-7E:G is built with a state of the art design, with features such as pre-charge data retiming and sense amplifiers to minimize data errors, error checking and correcting functions, self-refreshing functions. It is also a drop-in solution, so it is easy to integrate into existing systems. This means that it saves time and money on designing your system. The memory chip also uses multiplexed addressing to increase data transfer rates, which makes it even more efficient.
Due to its low power requirements, wide range of applications, and high performance, MT48LC4M16A2P-7E:G is used in a variety of embedded applications, including medical sensors, industrial automation, wireless communication systems, data acquisition systems and thermometers.
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MT48LC8M32B2F5-7 TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 90V... |
MT48V8M16LFF4-8 IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 54V... |
MT48H32M16LFB4-75 IT:C TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 512M PARALLEL 54V... |
MT48LC4M32B2P-6A AAT:L TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 86T... |
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MT48LC8M16LFB4-8 IT:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 54V... |
MT48H16M32LFB5-75 IT:C | Micron Techn... | -- | 1000 | IC DRAM 512M PARALLEL 90V... |
MT48LC4M16A2P-7E AIT:J TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 64M PARALLEL 54TS... |
MT48LC8M16A2P-7E AIT:L TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 54T... |
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MT48V4M32LFF5-10 IT:G | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 90V... |
MT48LC32M8A2P-6A:G TR | Micron Techn... | 0.0 $ | 1000 | IC DRAM 256M PARALLEL 54T... |
MT48H8M16LFB4-6:K | Micron Techn... | 0.0 $ | 1000 | IC DRAM 128M PARALLEL 54V... |
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